Effects of etchants in the transfer of chemical vapor deposited graphene

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dc.citation.articleNumber195103en_US
dc.citation.journalTitleJournal of Applied Physicsen_US
dc.citation.volumeNumber123en_US
dc.contributor.authorWang, M.en_US
dc.contributor.authorYang, E.H.en_US
dc.contributor.authorVajtai, R.en_US
dc.contributor.authorKono, J.en_US
dc.contributor.authorAjayan, P.M.en_US
dc.date.accessioned2018-09-11T20:40:46Zen_US
dc.date.available2018-09-11T20:40:46Zen_US
dc.date.issued2018en_US
dc.description.abstractThe quality of graphene can be strongly modified during the transfer process following chemical vapor deposition (CVD) growth. Here, we transferred CVD-grown graphene from a copper foil to a SiO2/Si substrate using wet etching with four different etchants: HNO3, FeCl3, (NH4)2S2O8, and a commercial copper etchant. We then compared the quality of graphene after the transfer process in terms of surface modifications, pollutions (residues and contaminations), and electrical properties (mobility and density). Our tests and analyses showed that the commercial copper etchant provides the best structural integrity, the least amount of residues, and the smallest doping carrier concentration.en_US
dc.identifier.citationWang, M., Yang, E.H., Vajtai, R., et al.. "Effects of etchants in the transfer of chemical vapor deposited graphene." <i>Journal of Applied Physics,</i> 123, (2018) AIP: https://doi.org/10.1063/1.5009253.en_US
dc.identifier.doihttps://doi.org/10.1063/1.5009253en_US
dc.identifier.urihttps://hdl.handle.net/1911/102504en_US
dc.language.isoengen_US
dc.publisherAIPen_US
dc.rightsArticle is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.en_US
dc.titleEffects of etchants in the transfer of chemical vapor deposited grapheneen_US
dc.typeJournal articleen_US
dc.type.dcmiTexten_US
dc.type.publicationpublisher versionen_US
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