Effects of etchants in the transfer of chemical vapor deposited graphene

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dc.citation.articleNumber195103
dc.citation.journalTitleJournal of Applied Physics
dc.citation.volumeNumber123
dc.contributor.authorWang, M.
dc.contributor.authorYang, E.H.
dc.contributor.authorVajtai, R.
dc.contributor.authorKono, J.
dc.contributor.authorAjayan, P.M.
dc.date.accessioned2018-09-11T20:40:46Z
dc.date.available2018-09-11T20:40:46Z
dc.date.issued2018
dc.description.abstractThe quality of graphene can be strongly modified during the transfer process following chemical vapor deposition (CVD) growth. Here, we transferred CVD-grown graphene from a copper foil to a SiO2/Si substrate using wet etching with four different etchants: HNO3, FeCl3, (NH4)2S2O8, and a commercial copper etchant. We then compared the quality of graphene after the transfer process in terms of surface modifications, pollutions (residues and contaminations), and electrical properties (mobility and density). Our tests and analyses showed that the commercial copper etchant provides the best structural integrity, the least amount of residues, and the smallest doping carrier concentration.
dc.identifier.citationWang, M., Yang, E.H., Vajtai, R., et al.. "Effects of etchants in the transfer of chemical vapor deposited graphene." <i>Journal of Applied Physics,</i> 123, (2018) AIP: https://doi.org/10.1063/1.5009253.
dc.identifier.doihttps://doi.org/10.1063/1.5009253
dc.identifier.urihttps://hdl.handle.net/1911/102504
dc.language.isoeng
dc.publisherAIP
dc.rightsArticle is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
dc.titleEffects of etchants in the transfer of chemical vapor deposited graphene
dc.typeJournal article
dc.type.dcmiText
dc.type.publicationpublisher version
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