Browsing by Author "Yao, Jun"
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Item Addressable SiOX memory array with incorporated diodes(2016-07-05) Tour, James M.; Yao, Jun; Lin, Jian; Wang, Gunuk; Palem, Krishna; Rice University; Nanyang Technological University; United States Patent and Trademark OfficeVarious embodiments of the resistive memory cells and arrays discussed herein comprise: (1) a first electrode; (2) a second electrode; (3) resistive memory material; and (4) a diode. The resistive memory material is selected from the group consisting of SiOx, SiOxH, SiOxNy, SiOxNyH, SiOxCz, SiOxCzH, and combinations thereof, wherein each of x, y and z are equal to or greater than 1 and equal to or less than 2. The diode may be any suitable diode, such as n-p diodes, p-n diodes, and Schottky diodes.Item Electronic devices containing switchably conductive silicon oxides as a switching element and methods for production and use thereof(2013-11-26) Tour, James M.; Yao, Jun; Natelson, Douglas; Zhong, Lin; He, Tao; Rice University; United States Patent and Trademark OfficeIn various embodiments, electronic devices containing switchably conductive silicon oxide as a switching element are described herein. The electronic devices are two-terminal devices containing a first electrical contact and a second electrical contact in which at least one of the first electrical contact or the second electrical contact is deposed on a substrate to define a gap region therebetween. A switching layer containing a switchably conductive silicon oxide resides in the gap region between the first electrical contact and the second electrical contact. The electronic devices exhibit hysteretic current versus voltage properties, enabling their use in switching and memory applications. Methods for configuring, operating and constructing the electronic devices are also presented herein.Item Electronic devices containing switchably conductive silicon oxides as a switching element and methods for production and use thereof(2015-09-08) Tour, James M.; Yao, Jun; Natelson, Douglas; Zhong, Lin; He, Tao; Rice University; United States Patent and Trademark OfficeIn various embodiments, electronic devices containing switchably conductive silicon oxide as a switching element are described herein. The electronic devices are two-terminal devices containing a first electrical contact and a second electrical contact in which at least one of the first electrical contact or the second electrical contact is deposed on a substrate to define a gap region therebetween. A switching layer containing a switchably conductive silicon oxide resides in the gap region between the first electrical contact and the second electrical contact. The electronic devices exhibit hysteretic current versus voltage properties, enabling their use in switching and memory applications. Methods for configuring, operating and constructing the electronic devices are also presented herein.Item In situ imaging of the conducting filament in a silicon oxide resistive switch(Nature Publishing Group, 2012) Yao, Jun; Zhong, Lin; Natelson, Douglas; Tour, James M.; Chemistry; Bioengineering; Chemistry; Computer Science; Electrical and Computer Engineering; Materials Science and Nanoengineering; Applied PhysicsThe nature of the conducting filaments in many resistive switching systems has been elusive. Throughﾠin situﾠtransmission electron microscopy, we image the real-time formation and evolution of the filament in a silicon oxide resistive switch. The electroforming process is revealed to involve the local enrichment of silicon from the silicon oxide matrix. Semi-metallic silicon nanocrystals with structural variations from the conventional diamond cubic form of silicon are observed, which likely accounts for the conduction in the filament. The growth and shrinkage of the silicon nanocrystals in response to different electrical stimuli show energetically viable transition processes in the silicon forms, offering evidence for the switching mechanism. The study here also provides insights into the electrical breakdown process in silicon oxide layers, which are ubiquitous in a host of electronic devices.Item Method for fabrication of a semiconductor element and structure thereof(2013-03-05) Or-Bach, Zvi; Tour, James M.; Yao, Jun; Cronquist, Brian; Rice University; United States Patent and Trademark OfficeRe-programmable antifuses and structures utilizing re-programmable antifuses are presented herein. Such structures include a configurable interconnect circuit having at least one re-programmable antifuse, wherein the at least one re-programmable antifuse is configured to be programmed to conduct by applying a first voltage across it and is configured to be re-programmed not to conduct by applying second voltage across it, wherein the second voltage is higher than the first voltage. Additionally, the re-programmable antifuses may be configured to a permanently conductive state by applying an even higher voltage across it.Item Method for fabrication of a semiconductor element and structure thereof(2011-07-05) Or-Bach, Zvi; Tour, James M.; Sinitskiy, Alexander; Yao, Jun; Beitler, Elvira; Rice University; United States Patent and Trademark OfficeRe-programmable antifuses and structures utilizing re-programmable antifuses are presented. Such structures include a configurable interconnect circuit having at least one re-programmable antifuse, wherein the at least one re-programmable antifuse is configured to be programmed to conduct by applying a first voltage across it and is configured to be re-programmed not to conduct by applying second voltage across it, wherein the second voltage is higher than the first voltage. Other embodiments of antifuses include an initializing step prior to programming.Item Mutant Kras- and p16-regulated NOX4 activation overcomes metabolic checkpoints in development of pancreatic ductal adenocarcinoma(Springer Nature, 2017) Ju, Huai-Qiang; Ying, Haoqiang; Tian, Tian; Ling, Jianhua; Fu, Jie; Lu, Yu; Wu, Min; Yang, Lifeng; Achreja, Abhinav; Chen, Gang; Zhuang, Zhuonan; Wang, Huamin; Nagrath, Deepak; Yao, Jun; Hung, Mien-Chie; DePinho, Ronald A.; Huang, Peng; Xu, Rui-Hua; Chiao, Paul J.; Laboratory for Systems Biology of Human DiseasesKras activation and p16 inactivation are required to develop pancreatic ductal adenocarcinoma (PDAC). However, the biochemical mechanisms underlying these double alterations remain unclear. Here we discover that NAD(P)H oxidase 4 (NOX4), an enzyme known to catalyse the oxidation of NAD(P)H, is upregulated when p16 is inactivated by looking at gene expression profiling studies. Activation of NOX4 requires catalytic subunit p22phox, which is upregulated following Kras activation. Both alterations are also detectable in PDAC cell lines and patient specimens. Furthermore, we show that elevated NOX4 activity accelerates oxidation of NADH and supports increased glycolysis by generating NAD+, a substrate for GAPDH-mediated glycolytic reaction, promoting PDAC cell growth. Mechanistically, NOX4 was induced through p16-Rb-regulated E2F and p22phox was induced by KrasG12V-activated NF-κB. In conclusion, we provide a biochemical explanation for the cooperation between p16 inactivation and Kras activation in PDAC development and suggest that NOX4 is a potential therapeutic target for PDAC.Item Resistive Switching and Memory effects in Silicon Oxide Based Nanostructures(2012) Yao, Jun; Tour, James M.Silicon oxide (SiO x 1 ∠ x [∠, double =]2) has long been used and considered as a passive and insulating component in the construction of electronic devices. In contrast, here the active role of SiO x in constructing a type of resistive switching memory is studied. From electrode-independent electrical behaviors to the visualization of the conducting filament inside the SiO x matrix, the intrinsic switching picture in SiO x is gradually revealed. The thesis starts with the introduction of some similar phenomenological switching behaviors in different electronic structures (Chapter 1), and then generalizes the electrode-material-independent electrical behaviors on SiO x substrates, providing indirect evidence to the intrinsic SiO x switching (Chapter 2). From planar nanogap systems to vertical sandwiched structures, Chapter 3 further discusses the switching behaviors and properties in SiO x . By localization of the switching site, the conducting filament in SiO x is visualized under transmission electron microscope using both static and in situ imaging methods (Chapter 4). With the intrinsic conduction and switching in SiO x largely revealed, Chapter 5 discusses its impact and implications to the molecular electronics and nanoelectronics where SiO x is constantly used. As comparison, another type of memory effect in semiconductors (carbon nanotubes) based on charge trapping at the semiconductor/SiO x interface is discussed (Chapter 6).Item Resistive switching in silicon oxide-based systems(2010) Yao, Jun; Natelson, DouglasVoltage-controlled resistive switching in various gap systems on SiO2 substrates is demonstrated. The nanosized gaps are made by several means using different materials including metals, semiconductors and amorphous carbon. The switching site is further reduced in size by using multi-walled carbon nanotubes and single-walled carbon nanotubes. The switching in all the gap systems shares the same characteristics. This independence of switching on the material compositions of the electrodes, accompanied by observable damage to the SiO2 substrate at the gap region, bespeaks the intrinsic switching from post-breakdown SiO2. It calls for caution when studying resistive switching in nanosystems on oxide substrates, since oxide breakdown extrinsic to the nanosystem can mimic resistive switching. Meanwhile, the devices show promising memory properties. The observed intermediate states reveal the filamentary nature of the switching. The switching is further explored in a vertical representation as potential candidate for high-density memory applications.Item Terahertz and Infrared Spectroscopy of Gated Large-Area Graphene(American Chemical Society, 2012) Ren, Lei; Zhang, Qi; Yao, Jun; Sun, Zhengzong; Kaneko, Ryosuke; Yan, Zheng; Nanot, Sébastien L.; Jin, Zhong; Kawayama, Iwao; Tonouchi, Masayoshi; Tour, James M.; Kono, Junichiro; Bioengineering; Chemistry; Computer Science; Materials Science and Nanoengineering; Electrical and Computer Engineering; Applied PhysicsWe have fabricated a centimeter-size single-layer graphene device with a gate electrode, which can modulate the transmission of terahertz and infrared waves. Using time-domain terahertz spectroscopy and Fourier-transform infrared spectroscopy in a wide frequency range (10–10 000 cm–1), we measured the dynamic conductivity change induced by electrical gating and thermal annealing. Both methods were able to effectively tune the Fermi energy, EF, which in turn modified the Drude-like intraband absorption in the terahertz as well as the “2EF onset” for interband absorption in the mid-infrared. These results not only provide fundamental insight into the electromagnetic response of Dirac fermions in graphene but also demonstrate the key functionalities of large-area graphene devices that are desired for components in terahertz and infrared optoelectronics.Item Vertically-stacked electronic devices having conductive carbon films(2013-03-12) Tour, James M.; Li, Yubao; Sinitskiy, Alexander; Zhong, Lin; Dong, Mian; Yao, Jun; Rice University; United States Patent and Trademark OfficeVertically-stacked electronic devices having conductive carbon films are disclosed. The vertically-stacked devices exhibit non-linear current-versus-voltage response over a voltage sweep range in various embodiments. The vertically-stacked devices may be assembled into arrays where the vertically-stacked devices may be electrically addressed independently of one another. Uses of the vertically-stacked electronic devices and arrays as two-terminal memory devices, logic units, and sensors are disclosed. Crossbar arrays of vertically-stacked electronic devices having conductive carbon films and nanowire electrodes are disclosed.