Addressable SiOX memory array with incorporated diodes

Date
2016-07-05
Journal Title
Journal ISSN
Volume Title
Publisher
Description
Abstract

Various embodiments of the resistive memory cells and arrays discussed herein comprise: (1) a first electrode; (2) a second electrode; (3) resistive memory material; and (4) a diode. The resistive memory material is selected from the group consisting of SiOx, SiOxH, SiOxNy, SiOxNyH, SiOxCz, SiOxCzH, and combinations thereof, wherein each of x, y and z are equal to or greater than 1 and equal to or less than 2. The diode may be any suitable diode, such as n-p diodes, p-n diodes, and Schottky diodes.

Description
Advisor
Degree
Type
Utility patent
Keywords
Citation

Tour, James M., Yao, Jun, Lin, Jian, Wang, Gunuk and Palem, Krishna, "Addressable SiOX memory array with incorporated diodes." Patent US9385163. issued 2016-07-05. Retrieved from https://hdl.handle.net/1911/91359.

Has part(s)
Forms part of
Published Version
Rights
Link to license
Citable link to this page
Collections