Addressable SiOX memory array with incorporated diodes

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dc.contributor.assigneeRice Universityen_US
dc.contributor.assigneeNanyang Technological Universityen_US
dc.contributor.publisherUnited States Patent and Trademark Officeen_US
dc.creatorTour, James M.en_US
dc.creatorYao, Junen_US
dc.creatorLin, Jianen_US
dc.creatorWang, Gunuken_US
dc.creatorPalem, Krishnaen_US
dc.date.accessioned2016-08-30T17:29:51Zen_US
dc.date.available2016-08-30T17:29:51Zen_US
dc.date.filed2012-08-27en_US
dc.date.issued2016-07-05en_US
dc.description.abstractVarious embodiments of the resistive memory cells and arrays discussed herein comprise: (1) a first electrode; (2) a second electrode; (3) resistive memory material; and (4) a diode. The resistive memory material is selected from the group consisting of SiOx, SiOxH, SiOxNy, SiOxNyH, SiOxCz, SiOxCzH, and combinations thereof, wherein each of x, y and z are equal to or greater than 1 and equal to or less than 2. The diode may be any suitable diode, such as n-p diodes, p-n diodes, and Schottky diodes.en_US
dc.digitization.specificationsThis patent information was downloaded from the US Patent and Trademark website (http://www.uspto.gov/) as image-PDFs. The PDFs were OCRed for access purposesen_US
dc.format.extent24 ppen_US
dc.identifier.citationTour, James M., Yao, Jun, Lin, Jian, Wang, Gunuk and Palem, Krishna, "Addressable SiOX memory array with incorporated diodes." Patent US9385163. issued 2016-07-05. Retrieved from <a href="https://hdl.handle.net/1911/91359">https://hdl.handle.net/1911/91359</a>.en_US
dc.identifier.patentIDUS9385163en_US
dc.identifier.urihttps://hdl.handle.net/1911/91359en_US
dc.language.isoengen_US
dc.titleAddressable SiOX memory array with incorporated diodesen_US
dc.typeUtility patenten_US
dc.type.dcmiTexten_US
dc.type.genrepatentsen_US
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