Characterizations of two-photon absorption process induced by defects in aluminum nitride using Z-scan method

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dc.citation.articleNumber075011en_US
dc.citation.issueNumber7en_US
dc.citation.journalTitleSemiconductor Science and Technologyen_US
dc.citation.volumeNumber39en_US
dc.contributor.authorZhou, Jinganen_US
dc.contributor.authorLi, Taoen_US
dc.contributor.authorZhao, Xuanen_US
dc.contributor.authorZhang, Xiangen_US
dc.contributor.authorDoumani, Jacquesen_US
dc.contributor.authorXu, Mingfeien_US
dc.contributor.authorHe, Ziyien_US
dc.contributor.authorLuo, Shisongen_US
dc.contributor.authorMei, Zhaoboen_US
dc.contributor.authorChang, Chengen_US
dc.contributor.authorRobinson, Jacob T.en_US
dc.contributor.authorAjayan, Pulickel M.en_US
dc.contributor.authorKono, Junichiroen_US
dc.contributor.authorZhao, Yujien_US
dc.contributor.orgSmalley-Curl Instituteen_US
dc.date.accessioned2024-08-02T13:32:08Zen_US
dc.date.available2024-08-02T13:32:08Zen_US
dc.date.issued2024en_US
dc.description.abstractIn this work, we reported two-photon absorption (TPA) measurements for aluminum vacancies in Aluminum nitride single crystals. We measured the linear transmission and identified the defect levels. Using the Z-scan method, we measured the TPA coefficients of the transitions between defect levels from 380 nm to 735 nm. The transition occurs between the aluminum vacancies defect levels. Furthermore, the power dependence shows good linear fitting, confirming the TPA mechanism. These results will be helpful for the design and fabrication of ultra-low loss waveguides and integrated photonics in the ultraviolet spectral range.en_US
dc.identifier.citationZhou, J., Li, T., Zhao, X., Zhang, X., Doumani, J., Xu, M., He, Z., Luo, S., Mei, Z., Chang, C., Robinson, J. T., Ajayan, P. M., Kono, J., & Zhao, Y. (2024). Characterizations of two-photon absorption process induced by defects in aluminum nitride using Z-scan method. Semiconductor Science and Technology, 39(7), 075011. https://doi.org/10.1088/1361-6641/ad4f09en_US
dc.identifier.digitalZhou_2024_Semicond_Sci_Technol_39_075011en_US
dc.identifier.doihttps://doi.org/10.1088/1361-6641/ad4f09en_US
dc.identifier.urihttps://hdl.handle.net/1911/117566en_US
dc.language.isoengen_US
dc.publisherIOP Publishingen_US
dc.rightsExcept where otherwise noted, this work is licensed under a Creative Commons Attribution (CC BY) license.  Permission to reuse, publish, or reproduce the work beyond the terms of the license or beyond the bounds of fair use or other exemptions to copyright law must be obtained from the copyright holder.en_US
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/en_US
dc.titleCharacterizations of two-photon absorption process induced by defects in aluminum nitride using Z-scan methoden_US
dc.typeJournal articleen_US
dc.type.dcmiTexten_US
dc.type.publicationpublisher versionen_US
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