Characterizations of two-photon absorption process induced by defects in aluminum nitride using Z-scan method

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dc.citation.articleNumber075011
dc.citation.issueNumber7
dc.citation.journalTitleSemiconductor Science and Technology
dc.citation.volumeNumber39
dc.contributor.authorZhou, Jingan
dc.contributor.authorLi, Tao
dc.contributor.authorZhao, Xuan
dc.contributor.authorZhang, Xiang
dc.contributor.authorDoumani, Jacques
dc.contributor.authorXu, Mingfei
dc.contributor.authorHe, Ziyi
dc.contributor.authorLuo, Shisong
dc.contributor.authorMei, Zhaobo
dc.contributor.authorChang, Cheng
dc.contributor.authorRobinson, Jacob T.
dc.contributor.authorAjayan, Pulickel M.
dc.contributor.authorKono, Junichiro
dc.contributor.authorZhao, Yuji
dc.contributor.orgSmalley-Curl Institute
dc.date.accessioned2024-08-02T13:32:08Z
dc.date.available2024-08-02T13:32:08Z
dc.date.issued2024
dc.description.abstractIn this work, we reported two-photon absorption (TPA) measurements for aluminum vacancies in Aluminum nitride single crystals. We measured the linear transmission and identified the defect levels. Using the Z-scan method, we measured the TPA coefficients of the transitions between defect levels from 380 nm to 735 nm. The transition occurs between the aluminum vacancies defect levels. Furthermore, the power dependence shows good linear fitting, confirming the TPA mechanism. These results will be helpful for the design and fabrication of ultra-low loss waveguides and integrated photonics in the ultraviolet spectral range.
dc.identifier.citationZhou, J., Li, T., Zhao, X., Zhang, X., Doumani, J., Xu, M., He, Z., Luo, S., Mei, Z., Chang, C., Robinson, J. T., Ajayan, P. M., Kono, J., & Zhao, Y. (2024). Characterizations of two-photon absorption process induced by defects in aluminum nitride using Z-scan method. Semiconductor Science and Technology, 39(7), 075011. https://doi.org/10.1088/1361-6641/ad4f09
dc.identifier.digitalZhou_2024_Semicond_Sci_Technol_39_075011
dc.identifier.doihttps://doi.org/10.1088/1361-6641/ad4f09
dc.identifier.urihttps://hdl.handle.net/1911/117566
dc.language.isoeng
dc.publisherIOP Publishing
dc.rightsExcept where otherwise noted, this work is licensed under a Creative Commons Attribution (CC BY) license.  Permission to reuse, publish, or reproduce the work beyond the terms of the license or beyond the bounds of fair use or other exemptions to copyright law must be obtained from the copyright holder.
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/
dc.titleCharacterizations of two-photon absorption process induced by defects in aluminum nitride using Z-scan method
dc.typeJournal article
dc.type.dcmiText
dc.type.publicationpublisher version
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