Tunable ultrasharp terahertz plasma edge in a lightly doped narrow-gap semiconductor

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dc.citation.firstpage9261en_US
dc.citation.issueNumber6en_US
dc.citation.journalTitleOptics Expressen_US
dc.citation.lastpage9268en_US
dc.citation.volumeNumber29en_US
dc.contributor.authorJu, Xueweien_US
dc.contributor.authorHu, Zhiqiangen_US
dc.contributor.authorHuang, Fengen_US
dc.contributor.authorWu, Haibinen_US
dc.contributor.authorBelyanin, Alexeyen_US
dc.contributor.authorKono, Junichiroen_US
dc.contributor.authorWang, Xiangfengen_US
dc.date.accessioned2021-04-21T15:46:23Zen_US
dc.date.available2021-04-21T15:46:23Zen_US
dc.date.issued2021en_US
dc.description.abstractPlasma edges in metals typically occur in the visible range, producing characteristic colors of metals. In a lightly doped semiconductor, the plasma edge can occur in the terahertz (THz) frequency range. Due to low scattering rates and variable electron densities in semiconductors, such THz plasma edges can be extremely sharp and greatly tunable. Here, we show that an ultrasharp THz plasma edge exists in a lightly n-doped InSb crystal with a record-high transmittance slope of 80 dB/THz. The frequency at which this sharp edge happens can be readily tuned by changing the temperature, electron density, scattering rate, and sample thickness. The edge frequency exhibited a surprising increase with decreasing temperature below 15 K, which we explain as a result of a weak-to-strong transition in the scattering rate, going from ωτ  ≫ 1 to ωτ ∼ 1. These results indicate that doped narrow-gap semiconductors provide a versatile platform for manipulating THz waves in a controllable manner, especially as a high-pass filter with an unprecedented on/off ratio.en_US
dc.identifier.citationJu, Xuewei, Hu, Zhiqiang, Huang, Feng, et al.. "Tunable ultrasharp terahertz plasma edge in a lightly doped narrow-gap semiconductor." <i>Optics Express,</i> 29, no. 6 (2021) Optical Society of America: 9261-9268. https://doi.org/10.1364/OE.418624.en_US
dc.identifier.digitaloe-29-6-9261en_US
dc.identifier.doihttps://doi.org/10.1364/OE.418624en_US
dc.identifier.urihttps://hdl.handle.net/1911/110305en_US
dc.language.isoengen_US
dc.publisherOptical Society of Americaen_US
dc.rightsPublished under the terms of the OSA Open Access Publishing Agreementen_US
dc.rights.urihttps://www.osapublishing.org/library/license_v1.cfm#VOR-OAen_US
dc.titleTunable ultrasharp terahertz plasma edge in a lightly doped narrow-gap semiconductoren_US
dc.typeJournal articleen_US
dc.type.dcmiTexten_US
dc.type.publicationpublisher versionen_US
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