Percolation and nanosecond fluctuators in V2O3 films within the metal–insulator transition

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dc.citation.articleNumber101103en_US
dc.citation.journalTitleAPL Materialsen_US
dc.citation.volumeNumber8en_US
dc.contributor.authorChen, Liyangen_US
dc.contributor.authorZhou, Panpanen_US
dc.contributor.authorKalcheim, Yoaven_US
dc.contributor.authorSchuller, Ivan K.en_US
dc.contributor.authorNatelson, Douglasen_US
dc.date.accessioned2020-11-10T21:22:24Zen_US
dc.date.available2020-11-10T21:22:24Zen_US
dc.date.issued2020en_US
dc.description.abstractVanadium sesquioxide (V2O3) exhibits a metal–insulator transition (MIT) at 160 K between a low temperature, monoclinic, antiferromagnetic Mott insulator and a high temperature, rhombohedral, paramagnetic, metallic phase. In thin films, a percolative transition takes place over a finite temperature range of phase coexistence. We study the fluctuating dynamics of this percolative MIT by measuring voltage noise spectra at both low frequencies (up to 100 kHz) and radio frequencies (between 10 MHz and 1 GHz). Noise intensity quadratic in bias is observed in the MIT region, as expected for resistive fluctuations probed nonperturbatively by the current. The low frequency noise resembles flicker-type 1/fβ noise, often taking on the form of Lorentzian noise dominated by a small number of fluctuators as the volume fraction of the insulating phase dominates. Radio frequency noise intensity also quadratic in the bias current allows the identification of resistance fluctuations with lifetimes below 1 ns, approaching timescales seen in non-equilibrium pump–probe studies of the transition. We find quantitative consistency with a model for fluctuations in the percolative fraction. The thermodynamics of the MIT suggests that dominant fluctuations are ones that alter small volumes affecting the connectivity of domain boundaries. This noise serves as a sensitive and nonperturbative probe for the dynamics of switching phenomena in this system.en_US
dc.identifier.citationChen, Liyang, Zhou, Panpan, Kalcheim, Yoav, et al.. "Percolation and nanosecond fluctuators in V2O3 films within the metal–insulator transition." <i>APL Materials,</i> 8, (2020) AIP Publishing LLC: https://doi.org/10.1063/5.0023475.en_US
dc.identifier.doihttps://doi.org/10.1063/5.0023475en_US
dc.identifier.urihttps://hdl.handle.net/1911/109543en_US
dc.language.isoengen_US
dc.publisherAIP Publishing LLCen_US
dc.rightsAll article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) licenseen_US
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/en_US
dc.titlePercolation and nanosecond fluctuators in V2O3 films within the metal–insulator transitionen_US
dc.typeJournal articleen_US
dc.type.dcmiTexten_US
dc.type.publicationpublisher versionen_US
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