Percolation and nanosecond fluctuators in V2O3 films within the metal–insulator transition

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dc.citation.articleNumber101103
dc.citation.journalTitleAPL Materials
dc.citation.volumeNumber8
dc.contributor.authorChen, Liyang
dc.contributor.authorZhou, Panpan
dc.contributor.authorKalcheim, Yoav
dc.contributor.authorSchuller, Ivan K.
dc.contributor.authorNatelson, Douglas
dc.date.accessioned2020-11-10T21:22:24Z
dc.date.available2020-11-10T21:22:24Z
dc.date.issued2020
dc.description.abstractVanadium sesquioxide (V2O3) exhibits a metal–insulator transition (MIT) at 160 K between a low temperature, monoclinic, antiferromagnetic Mott insulator and a high temperature, rhombohedral, paramagnetic, metallic phase. In thin films, a percolative transition takes place over a finite temperature range of phase coexistence. We study the fluctuating dynamics of this percolative MIT by measuring voltage noise spectra at both low frequencies (up to 100 kHz) and radio frequencies (between 10 MHz and 1 GHz). Noise intensity quadratic in bias is observed in the MIT region, as expected for resistive fluctuations probed nonperturbatively by the current. The low frequency noise resembles flicker-type 1/fβ noise, often taking on the form of Lorentzian noise dominated by a small number of fluctuators as the volume fraction of the insulating phase dominates. Radio frequency noise intensity also quadratic in the bias current allows the identification of resistance fluctuations with lifetimes below 1 ns, approaching timescales seen in non-equilibrium pump–probe studies of the transition. We find quantitative consistency with a model for fluctuations in the percolative fraction. The thermodynamics of the MIT suggests that dominant fluctuations are ones that alter small volumes affecting the connectivity of domain boundaries. This noise serves as a sensitive and nonperturbative probe for the dynamics of switching phenomena in this system.
dc.identifier.citationChen, Liyang, Zhou, Panpan, Kalcheim, Yoav, et al.. "Percolation and nanosecond fluctuators in V2O3 films within the metal–insulator transition." <i>APL Materials,</i> 8, (2020) AIP Publishing LLC: https://doi.org/10.1063/5.0023475.
dc.identifier.doihttps://doi.org/10.1063/5.0023475
dc.identifier.urihttps://hdl.handle.net/1911/109543
dc.language.isoeng
dc.publisherAIP Publishing LLC
dc.rightsAll article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/
dc.titlePercolation and nanosecond fluctuators in V2O3 films within the metal–insulator transition
dc.typeJournal article
dc.type.dcmiText
dc.type.publicationpublisher version
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