Chemical tuning of electrical transport in Ti1−xPtxSe2−y

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dc.citation.firstpage45125en_US
dc.citation.journalTitlePhysical Review Ben_US
dc.citation.volumeNumber91en_US
dc.contributor.authorChen, Justin S.en_US
dc.contributor.authorWang, Jiakui K.en_US
dc.contributor.authorCarr, Scott V.en_US
dc.contributor.authorVogel, Sven C.en_US
dc.contributor.authorGourdon, Olivieren_US
dc.contributor.authorDai, Pengchengen_US
dc.contributor.authorMorosan, E.en_US
dc.date.accessioned2015-03-02T16:58:31Z
dc.date.available2015-03-02T16:58:31Z
dc.date.issued2015en_US
dc.description.abstractThe structural and transport properties of polycrystalline Ti1−xPtxSe2−y(x≤0.13,y≤0.2) are studied, revealing highly tunable electrical properties, spanning nearly ten orders of magnitude in scaled resistivity. Using x-ray and neutron diffraction, Pt is found to dope on the Ti site. In the absence of Pt doping (for x=0), Se deficiency (y>0) increases the metallic character of TiSe2, while a large increase of the low-temperature resistivity is favored by a lack of Se deficiency (y=0) and increasing amounts of doped Pt (x>0). The chemical tuning of the resistivity in Ti1−xPtxSe2−y with Se deficiency and Pt doping results in a metal-to-insulator transition. Simultaneous Pt doping and Se deficiency (x,y>0) confirms the competition between the two opposing trends in electrical transport, with the main outcome being the suppression of the charge density wave transition below 2 K for y=2x=0.18. Band structure calculations on a subset of Ti1−xPtxSe2−y compositions are in line with the experimental observations.en_US
dc.identifier.citationChen, Justin S., Wang, Jiakui K., Carr, Scott V., et al.. "Chemical tuning of electrical transport in Ti1−xPtxSe2−y." <i>Physical Review B,</i> 91, (2015) American Physical Society: 45125. http://dx.doi.org/10.1103/PhysRevB.91.045125.
dc.identifier.doihttp://dx.doi.org/10.1103/PhysRevB.91.045125en_US
dc.identifier.urihttps://hdl.handle.net/1911/79052
dc.language.isoengen_US
dc.publisherAmerican Physical Society
dc.rightsArticle is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
dc.titleChemical tuning of electrical transport in Ti1−xPtxSe2−yen_US
dc.typeJournal articleen_US
dc.type.dcmiTexten_US
dc.type.publicationpublisher versionen_US
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