Inelastic ion scattering from semiconductor surfaces

dc.contributor.advisorNordlander, Peter J.en_US
dc.creatorWolfgang, John A.en_US
dc.date.accessioned2009-06-04T08:33:13Zen_US
dc.date.available2009-06-04T08:33:13Zen_US
dc.date.issued2000en_US
dc.description.abstractRecent experimental investigations into charge transfer during ion/semiconductor surface collisions indicate dependence of the scattered ion's neutralization probability upon the target surface's local electronic environment along the scattered ion trajectory. This work presents qualitative modeling of these experiments demonstrating how the target surface's local electrostatic potential and charge density modify the scattered ion's neutralization rates. These models have been applied to Ne+ scattering and S- recoil from CdS {0001} and {0001¯} surfaces as well as Ne + scattering from intrinsic, n- and p-doped Si(100)-(2x1) surfaces. Correlation between electrostatic surface potential and ion neutralization probability has been shown for ion scattering from the CdS surfaces. Ne + neutralization during scattering from the Si(100)-(2x1) surface correlates to local surface charge density along the ion trajectory. Variations in ion neutralization rate for the intrinsic, n- and p-doped surfaces have been correlated to band bending at the Si surface.en_US
dc.format.extent53 p.en_US
dc.format.mimetypeapplication/pdfen_US
dc.identifier.callnoTHESIS PHYS. 2000 WOLFGANGen_US
dc.identifier.citationWolfgang, John A.. "Inelastic ion scattering from semiconductor surfaces." (2000) Master’s Thesis, Rice University. <a href="https://hdl.handle.net/1911/17388">https://hdl.handle.net/1911/17388</a>.en_US
dc.identifier.urihttps://hdl.handle.net/1911/17388en_US
dc.language.isoengen_US
dc.rightsCopyright is held by the author, unless otherwise indicated. Permission to reuse, publish, or reproduce the work beyond the bounds of fair use or other exemptions to copyright law must be obtained from the copyright holder.en_US
dc.subjectCondensed matter physicsen_US
dc.titleInelastic ion scattering from semiconductor surfacesen_US
dc.typeThesisen_US
dc.type.materialTexten_US
thesis.degree.departmentPhysicsen_US
thesis.degree.disciplineNatural Sciencesen_US
thesis.degree.grantorRice Universityen_US
thesis.degree.levelMastersen_US
thesis.degree.nameMaster of Scienceen_US
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