Interplay between Point and Extended Defects and Their Effects on Jerky Domain-Wall Motion in Ferroelectric Thin Films

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dc.citation.articleNumber106801en_US
dc.citation.issueNumber10en_US
dc.citation.journalTitlePhysical Review Lettersen_US
dc.citation.volumeNumber133en_US
dc.contributor.authorBulanadi, Ralphen_US
dc.contributor.authorCordero-Edwards, Kumaraen_US
dc.contributor.authorTückmantel, Philippeen_US
dc.contributor.authorSaremi, Saharen_US
dc.contributor.authorMorpurgo, Giacomoen_US
dc.contributor.authorZhang, Qien_US
dc.contributor.authorMartin, Lane W.en_US
dc.contributor.authorNagarajan, Valanooren_US
dc.contributor.authorParuch, Patrycjaen_US
dc.contributor.orgRice Advanced Materials Instituteen_US
dc.date.accessioned2024-10-01T14:03:57Zen_US
dc.date.available2024-10-01T14:03:57Zen_US
dc.date.issued2024en_US
dc.description.abstractDefects have a significant influence on the polarization and electromechanical properties of ferroelectric materials. Statistically, they can be seen as random pinning centers acting on an elastic manifold, slowing domain-wall propagation and raising the energy required to switch polarization. Here we show that the “dressing” of defects can lead to unprecedented control of domain-wall dynamics. We engineer defects of two different dimensionalities in ferroelectric oxide thin films—point defects externally induced via He2+ bombardment, and extended quasi-one-dimensional 𝑎 domains formed in response to internal strains. The 𝑎 domains act as extended strong pinning sites (as expected) imposing highly localized directional constraints. Surprisingly, the induced point defects in the He2+ bombarded samples orient and align to impose further directional pinning, screening the effect of 𝑎 domains. This defect interplay produces more uniform and predictable domain-wall dynamics. Such engineered interactions between defects are crucial for advancements in ferroelectric devices.en_US
dc.identifier.citationBulanadi, R., Cordero-Edwards, K., Tückmantel, P., Saremi, S., Morpurgo, G., Zhang, Q., Martin, L. W., Nagarajan, V., & Paruch, P. (2024). Interplay between Point and Extended Defects and Their Effects on Jerky Domain-Wall Motion in Ferroelectric Thin Films. Physical Review Letters, 133(10), 106801. https://doi.org/10.1103/PhysRevLett.133.106801en_US
dc.identifier.digitalPhysRevLett-133-106801en_US
dc.identifier.doihttps://doi.org/10.1103/PhysRevLett.133.106801en_US
dc.identifier.urihttps://hdl.handle.net/1911/117894en_US
dc.language.isoengen_US
dc.publisherAmerican Physical Societyen_US
dc.rightsExcept where otherwise noted, this work is licensed under a Creative Commons Attribution (CC BY) license.  Permission to reuse, publish, or reproduce the work beyond the terms of the license or beyond the bounds of fair use or other exemptions to copyright law must be obtained from the copyright holder.en_US
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/en_US
dc.titleInterplay between Point and Extended Defects and Their Effects on Jerky Domain-Wall Motion in Ferroelectric Thin Filmsen_US
dc.typeJournal articleen_US
dc.type.dcmiTexten_US
dc.type.publicationpublisher versionen_US
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