Giant photothermoelectric effect in silicon nanoribbon photodetectors

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dc.citation.articleNumber120en_US
dc.citation.issueNumber1en_US
dc.citation.journalTitleLight: Science & Applicationsen_US
dc.citation.volumeNumber9en_US
dc.contributor.authorDai, Weien_US
dc.contributor.authorLiu, Weikangen_US
dc.contributor.authorYang, Jianen_US
dc.contributor.authorXu, Chaoen_US
dc.contributor.authorAlabastri, Alessandroen_US
dc.contributor.authorLiu, Changen_US
dc.contributor.authorNordlander, Peteren_US
dc.contributor.authorGuan, Zhiqiangen_US
dc.contributor.authorXu, Hongxingen_US
dc.contributor.orgLaboratory for Nanophotonicsen_US
dc.date.accessioned2020-08-14T20:13:37Zen_US
dc.date.available2020-08-14T20:13:37Zen_US
dc.date.issued2020en_US
dc.description.abstractThe photothermoelectric (PTE) effect enables efficient harvesting of the energy of photogenerated hot carriers and is a promising choice for high-efficiency photoelectric energy conversion and photodetection. Recently, the PTE effect was reported in low-dimensional nanomaterials, suggesting the possibility of optimizing their energy conversion efficiency. Unfortunately, the PTE effect becomes extremely inefficient in low-dimensional nanomaterials, owing to intrinsic disadvantages, such as low optical absorption and immature fabrication methods. In this study, a giant PTE effect was observed in lightly doped p-type silicon nanoribbons caused by photogenerated hot carriers. The open-circuit photovoltage responsivity of the device was 3-4 orders of magnitude higher than those of previously reported PTE devices. The measured photovoltage responses fit very well with the proposed photothermoelectric multiphysics models. This research proposes an application of the PTE effect and a possible method for utilizing hot carriers in semiconductors to significantly improve their photoelectric conversion efficiency.en_US
dc.identifier.citationDai, Wei, Liu, Weikang, Yang, Jian, et al.. "Giant photothermoelectric effect in silicon nanoribbon photodetectors." <i>Light: Science & Applications,</i> 9, no. 1 (2020) Springer Nature: https://doi.org/10.1038/s41377-020-00364-x.en_US
dc.identifier.doihttps://doi.org/10.1038/s41377-020-00364-xen_US
dc.identifier.urihttps://hdl.handle.net/1911/109223en_US
dc.language.isoengen_US
dc.publisherSpringer Natureen_US
dc.rightsThis article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder.en_US
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/en_US
dc.titleGiant photothermoelectric effect in silicon nanoribbon photodetectorsen_US
dc.typeJournal articleen_US
dc.type.dcmiTexten_US
dc.type.publicationpublisher versionen_US
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