High-performance 2D electronic devices enabled by strong and tough two-dimensional polymer with ultra-low dielectric constant

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dc.citation.articleNumber10780en_US
dc.citation.journalTitleNature Communicationsen_US
dc.citation.volumeNumber15en_US
dc.contributor.authorFang, Qiyien_US
dc.contributor.authorYi, Kongyangen_US
dc.contributor.authorZhai, Tianshuen_US
dc.contributor.authorLuo, Shisongen_US
dc.contributor.authorLin, Chen-yangen_US
dc.contributor.authorAi, Qingen_US
dc.contributor.authorZhu, Yifanen_US
dc.contributor.authorZhang, Boyuen_US
dc.contributor.authorAlvarez, Gustavo A.en_US
dc.contributor.authorShao, Yanjieen_US
dc.contributor.authorZhou, Haoleien_US
dc.contributor.authorGao, Guanhuien_US
dc.contributor.authorLiu, Yifengen_US
dc.contributor.authorXu, Ruien_US
dc.contributor.authorZhang, Xiangen_US
dc.contributor.authorWang, Yuzheen_US
dc.contributor.authorTian, Xiaoyinen_US
dc.contributor.authorZhang, Honghuen_US
dc.contributor.authorHan, Yimoen_US
dc.contributor.authorZhu, Hanyuen_US
dc.contributor.authorZhao, Yujien_US
dc.contributor.authorTian, Zhitingen_US
dc.contributor.authorZhong, Yuen_US
dc.contributor.authorLiu, Zhengen_US
dc.contributor.authorLou, Junen_US
dc.contributor.orgRice Advanced Materials Instituteen_US
dc.date.accessioned2025-01-09T20:17:04Zen_US
dc.date.available2025-01-09T20:17:04Zen_US
dc.date.issued2024en_US
dc.description.abstractAs the feature size of microelectronic circuits is scaling down to nanometer order, the increasing interconnect crosstalk, resistance-capacitance (RC) delay and power consumption can limit the chip performance and reliability. To address these challenges, new low-k dielectric (k < 2) materials need to be developed to replace current silicon dioxide (k = 3.9) or SiCOH, etc. However, existing low-k dielectric materials, such as organosilicate glass or polymeric dielectrics, suffer from poor thermal and mechanical properties. Two-dimensional polymers (2DPs) are considered promising low-k dielectric materials because of their good thermal and mechanical properties, high porosity and designability. Here, we report a chemical-vapor-deposition (CVD) method for growing fluoride rich 2DP-F films on arbitrary substrates. We show that the grown 2DP-F thin films exhibit ultra-low dielectric constant (in plane k = 1.85 and out-of-plane k = 1.82) and remarkable mechanical properties (Young’s modulus > 15 GPa). We also demonstrated the improved performance of monolayer MoS2 field-effect-transistors when utilizing 2DP-F thin films as dielectric substrates.en_US
dc.identifier.citationFang, Q., Yi, K., Zhai, T., Luo, S., Lin, C., Ai, Q., Zhu, Y., Zhang, B., Alvarez, G. A., Shao, Y., Zhou, H., Gao, G., Liu, Y., Xu, R., Zhang, X., Wang, Y., Tian, X., Zhang, H., Han, Y., … Lou, J. (2024). High-performance 2D electronic devices enabled by strong and tough two-dimensional polymer with ultra-low dielectric constant. Nature Communications, 15(1), 10780. https://doi.org/10.1038/s41467-024-53935-6en_US
dc.identifier.digitals41467-024-53935-6en_US
dc.identifier.doihttps://doi.org/10.1038/s41467-024-53935-6en_US
dc.identifier.urihttps://hdl.handle.net/1911/118142en_US
dc.language.isoengen_US
dc.publisherSpringer Natureen_US
dc.rightsExcept where otherwise noted, this work is licensed under a Creative Commons Attribution (CC BY) license. Permission to reuse, publish, or reproduce the work beyond the terms of the license or beyond the bounds of fair use or other exemptions to copyright law must be obtained from the copyright holder.en_US
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/en_US
dc.titleHigh-performance 2D electronic devices enabled by strong and tough two-dimensional polymer with ultra-low dielectric constanten_US
dc.typeJournal articleen_US
dc.type.dcmiTexten_US
dc.type.publicationpublisher versionen_US
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