Electrical performance of monolayer MoS2 field-effect transistors prepared by chemical vapor deposition

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dc.citation.firstpage193107en_US
dc.citation.journalTitleApplied Physics Lettersen_US
dc.citation.volumeNumber102en_US
dc.contributor.authorAmani, Matinen_US
dc.contributor.authorChin, Matthew L.en_US
dc.contributor.authorBirdwell, A. Glenen_US
dc.contributor.authorO'Regan, Terrance P.en_US
dc.contributor.authorNajmaei, Sinaen_US
dc.contributor.authorLiu, Zhengen_US
dc.contributor.authorAjayan, Pulickel M.en_US
dc.contributor.authorLou, Junen_US
dc.contributor.authorDubey, Madanen_US
dc.date.accessioned2013-05-22T15:17:55Zen_US
dc.date.available2013-05-22T15:17:55Zen_US
dc.date.issued2013en_US
dc.description.abstractMolybdenum disulfide (MoS2) field effect transistors (FET) were fabricated on atomically smooth large-area single layers grown by chemical vapor deposition. The layer qualities and physical properties were characterized using high-resolution Raman and photoluminescence spectroscopy, scanning electron microscopy, and atomic force microscopy. Electronic performance of the FET devices was measured using field effect mobility measurements as a function of temperature. The back-gated devices had mobilities of 6.0 cm2/V s at 300K without a high-j dielectric overcoat and increased to 16.1 cm2/V s with a high-j dielectric overcoat. In addition the devices show on/off ratios ranging from 105 to 109.en_US
dc.embargo.termsnoneen_US
dc.identifier.citationAmani, Matin, Chin, Matthew L., Birdwell, A. Glen, et al.. "Electrical performance of monolayer MoS2 field-effect transistors prepared by chemical vapor deposition." <i>Applied Physics Letters,</i> 102, (2013) American Institute of Physics: 193107. http://dx.doi.org/10.1063/1.4804546.en_US
dc.identifier.doihttp://dx.doi.org/10.1063/1.4804546en_US
dc.identifier.urihttps://hdl.handle.net/1911/71235en_US
dc.language.isoengen_US
dc.publisherAmerican Institute of Physicsen_US
dc.rightsArticle is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.en_US
dc.titleElectrical performance of monolayer MoS2 field-effect transistors prepared by chemical vapor depositionen_US
dc.typeJournal articleen_US
dc.type.dcmiTexten_US
dc.type.publicationpublisher versionen_US
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