Reversible non-volatile electronic switching in a near-room-temperature van der Waals ferromagnet

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dc.citation.articleNumber2739
dc.citation.journalTitleNature Communications
dc.citation.volumeNumber15
dc.contributor.authorWu, Han
dc.contributor.authorChen, Lei
dc.contributor.authorMalinowski, Paul
dc.contributor.authorJang, Bo Gyu
dc.contributor.authorDeng, Qinwen
dc.contributor.authorScott, Kirsty
dc.contributor.authorHuang, Jianwei
dc.contributor.authorRuff, Jacob P. C.
dc.contributor.authorHe, Yu
dc.contributor.authorChen, Xiang
dc.contributor.authorHu, Chaowei
dc.contributor.authorYue, Ziqin
dc.contributor.authorOh, Ji Seop
dc.contributor.authorTeng, Xiaokun
dc.contributor.authorGuo, Yucheng
dc.contributor.authorKlemm, Mason
dc.contributor.authorShi, Chuqiao
dc.contributor.authorShi, Yue
dc.contributor.authorSetty, Chandan
dc.contributor.authorWerner, Tyler
dc.contributor.authorHashimoto, Makoto
dc.contributor.authorLu, Donghui
dc.contributor.authorYilmaz, Turgut
dc.contributor.authorVescovo, Elio
dc.contributor.authorMo, Sung-Kwan
dc.contributor.authorFedorov, Alexei
dc.contributor.authorDenlinger, Jonathan D.
dc.contributor.authorXie, Yaofeng
dc.contributor.authorGao, Bin
dc.contributor.authorKono, Junichiro
dc.contributor.authorDai, Pengcheng
dc.contributor.authorHan, Yimo
dc.contributor.authorXu, Xiaodong
dc.contributor.authorBirgeneau, Robert J.
dc.contributor.authorZhu, Jian-Xin
dc.contributor.authorda Silva Neto, Eduardo H.
dc.contributor.authorWu, Liang
dc.contributor.authorChu, Jiun-Haw
dc.contributor.authorSi, Qimiao
dc.contributor.authorYi, Ming
dc.contributor.orgRice Center for Quantum Materials
dc.date.accessioned2024-10-08T13:28:38Z
dc.date.available2024-10-08T13:28:38Z
dc.date.issued2024
dc.description.abstractNon-volatile phase-change memory devices utilize local heating to toggle between crystalline and amorphous states with distinct electrical properties. Expanding on this kind of switching to two topologically distinct phases requires controlled non-volatile switching between two crystalline phases with distinct symmetries. Here, we report the observation of reversible and non-volatile switching between two stable and closely related crystal structures, with remarkably distinct electronic structures, in the near-room-temperature van der Waals ferromagnet Fe5−δGeTe2. We show that the switching is enabled by the ordering and disordering of Fe site vacancies that results in distinct crystalline symmetries of the two phases, which can be controlled by a thermal annealing and quenching method. The two phases are distinguished by the presence of topological nodal lines due to the preserved global inversion symmetry in the site-disordered phase, flat bands resulting from quantum destructive interference on a bipartite lattice, and broken inversion symmetry in the site-ordered phase.
dc.identifier.citationWu, H., Chen, L., Malinowski, P., Jang, B. G., Deng, Q., Scott, K., Huang, J., Ruff, J. P. C., He, Y., Chen, X., Hu, C., Yue, Z., Oh, J. S., Teng, X., Guo, Y., Klemm, M., Shi, C., Shi, Y., Setty, C., … Yi, M. (2024). Reversible non-volatile electronic switching in a near-room-temperature van der Waals ferromagnet. Nature Communications, 15(1), 2739. https://doi.org/10.1038/s41467-024-46862-z
dc.identifier.digitals41467-024-46862-z
dc.identifier.doihttps://doi.org/10.1038/s41467-024-46862-z
dc.identifier.urihttps://hdl.handle.net/1911/117939
dc.language.isoeng
dc.publisherSpringer Nature
dc.rightsExcept where otherwise noted, this work is licensed under a Creative Commons Attribution (CC BY) license. Permission to reuse, publish, or reproduce the work beyond the terms of the license or beyond the bounds of fair use or other exemptions to copyright law must be obtained from the copyright holder.
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/
dc.titleReversible non-volatile electronic switching in a near-room-temperature van der Waals ferromagnet
dc.typeJournal article
dc.type.dcmiText
dc.type.publicationpublisher version
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