Charge coupled device based on atomically layered van der waals solid state film for opto-electronic memory and image capture

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dc.contributor.assigneeRice Universityen_US
dc.contributor.publisherUnited States Patent and Trademark Officeen_US
dc.creatorLei, Sidongen_US
dc.creatorGe, Liehuien_US
dc.creatorGeorge, Antonyen_US
dc.creatorLi, Boen_US
dc.creatorVajtai, Roberten_US
dc.creatorAjayan, Pulickel M.en_US
dc.date.accessioned2016-10-18T14:52:31Zen_US
dc.date.available2016-10-18T14:52:31Zen_US
dc.date.filed2014-10-23en_US
dc.date.issued2016-08-30en_US
dc.description.abstractAn opto-electronic sensor may provide one or more layers of atomically layered photo-sensitive materials. The sensor may include a gate electrode layer, a dielectric layer in contact with the gate electrode layer, and a working media layer that is photo-sensitive deposited on the dielectric layer. The working media layer may provide one or more layers of one or more materials where each of the one or more layers is an atomic layer. The sensor may also include side electrodes in contact with the working media layer.en_US
dc.digitization.specificationsThis patent information was downloaded from the US Patent and Trademark website (http://www.uspto.gov/) as image-PDFs. The PDFs were OCRed for access purposesen_US
dc.format.extent13en_US
dc.identifier.citationLei, Sidong, Ge, Liehui, George, Antony, Li, Bo, Vajtai, Robert and Ajayan, Pulickel M., "Charge coupled device based on atomically layered van der waals solid state film for opto-electronic memory and image capture." Patent US9431565B2. issued 2016-08-30. Retrieved from <a href="https://hdl.handle.net/1911/91959">https://hdl.handle.net/1911/91959</a>.en_US
dc.identifier.patentIDUS9431565B2en_US
dc.identifier.urihttps://hdl.handle.net/1911/91959en_US
dc.language.isoengen_US
dc.titleCharge coupled device based on atomically layered van der waals solid state film for opto-electronic memory and image captureen_US
dc.typeUtility patenten_US
dc.type.dcmiTexten_US
dc.type.genrepatentsen_US
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