Charge coupled device based on atomically layered van der waals solid state film for opto-electronic memory and image capture

Abstract

An opto-electronic sensor may provide one or more layers of atomically layered photo-sensitive materials. The sensor may include a gate electrode layer, a dielectric layer in contact with the gate electrode layer, and a working media layer that is photo-sensitive deposited on the dielectric layer. The working media layer may provide one or more layers of one or more materials where each of the one or more layers is an atomic layer. The sensor may also include side electrodes in contact with the working media layer.

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Lei, Sidong, Ge, Liehui, George, Antony, Li, Bo, Vajtai, Robert and Ajayan, Pulickel M., "Charge coupled device based on atomically layered van der waals solid state film for opto-electronic memory and image capture." Patent US9431565B2. issued 2016-08-30. Retrieved from https://hdl.handle.net/1911/91959.

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