Tuning the charge states in InAs/GaSb or InAs/GaInSb composite quantum wells by persistent photoconductivity

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dc.citation.articleNumber75211
dc.citation.issueNumber7en_US
dc.citation.journalTitleAIP Advancesen_US
dc.citation.volumeNumber7en_US
dc.contributor.authorTong, Bingbingen_US
dc.contributor.authorHan, Zhongdongen_US
dc.contributor.authorLi, Tingxinen_US
dc.contributor.authorZhang, Chien_US
dc.contributor.authorSullivan, Gerarden_US
dc.contributor.authorDu, Rui-Ruien_US
dc.date.accessioned2017-08-11T20:05:52Z
dc.date.available2017-08-11T20:05:52Z
dc.date.issued2017en_US
dc.description.abstractWe have experimentally studied the persistent photoconductivity (PPC) in inverted InAs/GaSb and InAs/GaInSb quantum wells, which can be tuned into a bulk-insulating state by electron-hole hybridization. Specifically we tune the bulk band structure and carriers with light-emitting diode (LED) illuminations. The persistent photoconductivity could be negative or positive, depending on the specific doping structure and the illuminating photon energy. Compared to the widely-used electro-statically gating method, our findings provide a more flexible and non-invasive way to control the band structures and charge states in InAs/GaSb and InAs/GaInSb quantum wells (QWs).en_US
dc.identifier.citationTong, Bingbing, Han, Zhongdong, Li, Tingxin, et al.. "Tuning the charge states in InAs/GaSb or InAs/GaInSb composite quantum wells by persistent photoconductivity." <i>AIP Advances,</i> 7, no. 7 (2017) AIP Publishing: http://dx.doi.org/10.1063/1.4993894.
dc.identifier.doihttp://dx.doi.org/10.1063/1.4993894en_US
dc.identifier.urihttps://hdl.handle.net/1911/96648
dc.language.isoengen_US
dc.publisherAIP Publishing
dc.rightsAll article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license.en_US
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/en_US
dc.titleTuning the charge states in InAs/GaSb or InAs/GaInSb composite quantum wells by persistent photoconductivityen_US
dc.typeJournal articleen_US
dc.type.dcmiTexten_US
dc.type.publicationpublisher versionen_US
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