Defect-mediated transport and electronic irradiation effect in individual domains of CVD-grown monolayer MoS2

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dc.citation.articleNumber02B110en_US
dc.citation.issueNumber2en_US
dc.citation.journalTitleJournal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomenaen_US
dc.citation.volumeNumber33en_US
dc.contributor.authorDurand, Corentinen_US
dc.contributor.authorZhang, Xiaoguangen_US
dc.contributor.authorFowlkes, Jasonen_US
dc.contributor.authorNajmaei, Sinaen_US
dc.contributor.authorLou, Junen_US
dc.contributor.authorLi, An-Pingen_US
dc.date.accessioned2017-05-22T18:57:18Zen_US
dc.date.available2017-05-22T18:57:18Zen_US
dc.date.issued2015en_US
dc.description.abstractThe authors study the electrical transport properties of atomically thin individual crystalline grains of MoS2ﾠwith four-probeﾠscanning tunneling microscopy.ﾠTheﾠmonolayerﾠMoS2ﾠdomains are synthesized byﾠchemical vapor depositionﾠon SiO2/Si substrate. Temperature dependent measurements on conductance andﾠmobilityﾠshow that transport is dominated by an electron charge trapping and thermal release process with very lowﾠcarrier densityﾠandﾠmobility.ﾠThe effects of electronicﾠirradiationﾠare examined by exposing the film toﾠelectron beamﾠin theﾠscanning electron microscopeﾠin an ultrahigh vacuum environment. Theﾠirradiationﾠprocess is found to significantly affect theﾠmobilityﾠand theﾠcarrier densityﾠof the material, with the conductance showing a peculiar time-dependent relaxation behavior. It is suggested that the presence of defects in active MoS2ﾠlayer and dielectric layer create charge trapping sites, and a multiple trapping and thermal release process dictates the transport andﾠmobilityﾠcharacteristics. Theﾠelectron beamﾠirradiationﾠpromotes the formation of defects and impact the electrical properties of MoS2. Our study reveals the important roles of defects and theﾠelectron beamﾠirradiationﾠeffects in the electronic properties of atomic layers of MoS2.en_US
dc.identifier.citationDurand, Corentin, Zhang, Xiaoguang, Fowlkes, Jason, et al.. "Defect-mediated transport and electronic irradiation effect in individual domains of CVD-grown monolayer MoS2." <i>Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena,</i> 33, no. 2 (2015) AIP Publishing: http://dx.doi.org/10.1116/1.4906331.en_US
dc.identifier.doihttp://dx.doi.org/10.1116/1.4906331en_US
dc.identifier.urihttps://hdl.handle.net/1911/94331en_US
dc.language.isoengen_US
dc.publisherAIP Publishingen_US
dc.rightsArticle is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.en_US
dc.titleDefect-mediated transport and electronic irradiation effect in individual domains of CVD-grown monolayer MoS2en_US
dc.typeJournal articleen_US
dc.type.dcmiTexten_US
dc.type.publicationpublisher versionen_US
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