Defect-mediated transport and electronic irradiation effect in individual domains of CVD-grown monolayer MoS2

Abstract

The authors study the electrical transport properties of atomically thin individual crystalline grains of MoS2ᅠwith four-probeᅠscanning tunneling microscopy.ᅠTheᅠmonolayerᅠMoS2ᅠdomains are synthesized byᅠchemical vapor depositionᅠon SiO2/Si substrate. Temperature dependent measurements on conductance andᅠmobilityᅠshow that transport is dominated by an electron charge trapping and thermal release process with very lowᅠcarrier densityᅠandᅠmobility.ᅠThe effects of electronicᅠirradiationᅠare examined by exposing the film toᅠelectron beamᅠin theᅠscanning electron microscopeᅠin an ultrahigh vacuum environment. Theᅠirradiationᅠprocess is found to significantly affect theᅠmobilityᅠand theᅠcarrier densityᅠof the material, with the conductance showing a peculiar time-dependent relaxation behavior. It is suggested that the presence of defects in active MoS2ᅠlayer and dielectric layer create charge trapping sites, and a multiple trapping and thermal release process dictates the transport andᅠmobilityᅠcharacteristics. Theᅠelectron beamᅠirradiationᅠpromotes the formation of defects and impact the electrical properties of MoS2. Our study reveals the important roles of defects and theᅠelectron beamᅠirradiationᅠeffects in the electronic properties of atomic layers of MoS2.

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Durand, Corentin, Zhang, Xiaoguang, Fowlkes, Jason, et al.. "Defect-mediated transport and electronic irradiation effect in individual domains of CVD-grown monolayer MoS2." Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, 33, no. 2 (2015) AIP Publishing: http://dx.doi.org/10.1116/1.4906331.

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