Metal-to-insulator transition in Pt-doped TiSe 2 driven by emergent network of narrow transport channels

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dc.citation.articleNumber8
dc.citation.journalTitlenpj Quantum Materials
dc.citation.volumeNumber6
dc.contributor.authorLee, Kyungmin
dc.contributor.authorChoe, Jesse
dc.contributor.authorIaia, Davide
dc.contributor.authorLi, Juqiang
dc.contributor.authorZhao, Junjing
dc.contributor.authorShi, Ming
dc.contributor.authorMa, Junzhang
dc.contributor.authorYao, Mengyu
dc.contributor.authorWang, Zhenyu
dc.contributor.authorHuang, Chien-Lung
dc.contributor.authorOchi, Masayuki
dc.contributor.authorArita, Ryotaro
dc.contributor.authorChatterjee, Utpal
dc.contributor.authorMorosan, Emilia
dc.contributor.authorMadhavan, Vidya
dc.contributor.authorTrivedi, Nandini
dc.date.accessioned2021-02-24T19:16:03Z
dc.date.available2021-02-24T19:16:03Z
dc.date.issued2021
dc.description.abstractMetal-to-insulator transitions (MIT) can be driven by a number of different mechanisms, each resulting in a different type of insulator—Change in chemical potential can induce a transition from a metal to a band insulator; strong correlations can drive a metal into a Mott insulator with an energy gap; an Anderson transition, on the other hand, due to disorder leads to a localized insulator without a gap in the spectrum. Here, we report the discovery of an alternative route for MIT driven by the creation of a network of narrow channels. Transport data on Pt substituted for Ti in 1T-TiSe2 shows a dramatic increase of resistivity by five orders of magnitude for few % of Pt substitution, with a power-law dependence of the temperature-dependent resistivity ρ(T). Our scanning tunneling microscopy data show that Pt induces an irregular network of nanometer-thick domain walls (DWs) of charge density wave (CDW) order, which pull charge carriers out of the bulk and into the DWs. While the CDW domains are gapped, the charges confined to the narrow DWs interact strongly, with pseudogap-like suppression in the local density of states, even when they were weakly interacting in the bulk, and scatter at the DW network interconnects thereby generating the highly resistive state. Angle-resolved photoemission spectroscopy spectra exhibit pseudogap behavior corroborating the spatial coexistence of gapped domains and narrow domain walls with excess charge carriers.
dc.identifier.citationLee, Kyungmin, Choe, Jesse, Iaia, Davide, et al.. "Metal-to-insulator transition in Pt-doped TiSe 2 driven by emergent network of narrow transport channels." <i>npj Quantum Materials,</i> 6, (2021) Springer Nature: https://doi.org/10.1038/s41535-020-00305-2.
dc.identifier.digitals41535-020-00305-2
dc.identifier.doihttps://doi.org/10.1038/s41535-020-00305-2
dc.identifier.urihttps://hdl.handle.net/1911/110102
dc.language.isoeng
dc.publisherSpringer Nature
dc.rightsThis article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder.
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/
dc.titleMetal-to-insulator transition in Pt-doped TiSe 2 driven by emergent network of narrow transport channels
dc.typeJournal article
dc.type.dcmiText
dc.type.publicationpublisher version
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