Metal-to-insulator transition in Pt-doped TiSe 2 driven by emergent network of narrow transport channels

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dc.citation.articleNumber8en_US
dc.citation.journalTitlenpj Quantum Materialsen_US
dc.citation.volumeNumber6en_US
dc.contributor.authorLee, Kyungminen_US
dc.contributor.authorChoe, Jesseen_US
dc.contributor.authorIaia, Davideen_US
dc.contributor.authorLi, Juqiangen_US
dc.contributor.authorZhao, Junjingen_US
dc.contributor.authorShi, Mingen_US
dc.contributor.authorMa, Junzhangen_US
dc.contributor.authorYao, Mengyuen_US
dc.contributor.authorWang, Zhenyuen_US
dc.contributor.authorHuang, Chien-Lungen_US
dc.contributor.authorOchi, Masayukien_US
dc.contributor.authorArita, Ryotaroen_US
dc.contributor.authorChatterjee, Utpalen_US
dc.contributor.authorMorosan, Emiliaen_US
dc.contributor.authorMadhavan, Vidyaen_US
dc.contributor.authorTrivedi, Nandinien_US
dc.date.accessioned2021-02-24T19:16:03Zen_US
dc.date.available2021-02-24T19:16:03Zen_US
dc.date.issued2021en_US
dc.description.abstractMetal-to-insulator transitions (MIT) can be driven by a number of different mechanisms, each resulting in a different type of insulator—Change in chemical potential can induce a transition from a metal to a band insulator; strong correlations can drive a metal into a Mott insulator with an energy gap; an Anderson transition, on the other hand, due to disorder leads to a localized insulator without a gap in the spectrum. Here, we report the discovery of an alternative route for MIT driven by the creation of a network of narrow channels. Transport data on Pt substituted for Ti in 1T-TiSe2 shows a dramatic increase of resistivity by five orders of magnitude for few % of Pt substitution, with a power-law dependence of the temperature-dependent resistivity ρ(T). Our scanning tunneling microscopy data show that Pt induces an irregular network of nanometer-thick domain walls (DWs) of charge density wave (CDW) order, which pull charge carriers out of the bulk and into the DWs. While the CDW domains are gapped, the charges confined to the narrow DWs interact strongly, with pseudogap-like suppression in the local density of states, even when they were weakly interacting in the bulk, and scatter at the DW network interconnects thereby generating the highly resistive state. Angle-resolved photoemission spectroscopy spectra exhibit pseudogap behavior corroborating the spatial coexistence of gapped domains and narrow domain walls with excess charge carriers.en_US
dc.identifier.citationLee, Kyungmin, Choe, Jesse, Iaia, Davide, et al.. "Metal-to-insulator transition in Pt-doped TiSe 2 driven by emergent network of narrow transport channels." <i>npj Quantum Materials,</i> 6, (2021) Springer Nature: https://doi.org/10.1038/s41535-020-00305-2.en_US
dc.identifier.digitals41535-020-00305-2en_US
dc.identifier.doihttps://doi.org/10.1038/s41535-020-00305-2en_US
dc.identifier.urihttps://hdl.handle.net/1911/110102en_US
dc.language.isoengen_US
dc.publisherSpringer Natureen_US
dc.rightsThis article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder.en_US
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/en_US
dc.titleMetal-to-insulator transition in Pt-doped TiSe 2 driven by emergent network of narrow transport channelsen_US
dc.typeJournal articleen_US
dc.type.dcmiTexten_US
dc.type.publicationpublisher versionen_US
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