Tunneling noise and defects in exfoliated hexagonal boron nitride

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dc.citation.articleNumber105218en_US
dc.citation.issueNumber10en_US
dc.citation.journalTitleAIP Advancesen_US
dc.citation.volumeNumber9en_US
dc.contributor.authorZhao, Xuanhanen_US
dc.contributor.authorZhou, Panpanen_US
dc.contributor.authorChen, Liyangen_US
dc.contributor.authorWatanabe, Kenjien_US
dc.contributor.authorTaniguchi, Takashien_US
dc.contributor.authorNatelson, Douglasen_US
dc.date.accessioned2020-02-14T16:39:42Zen_US
dc.date.available2020-02-14T16:39:42Zen_US
dc.date.issued2019en_US
dc.description.abstractHexagonal boron nitride (hBN) has become a mainstay as an insulating barrier in stackable nanoelectronics because of its large bandgap and chemical stability. At mono- and bilayer thicknesses, hBN can function as a tunnel barrier for electronic spectroscopy measurements. Noise spectroscopy is of particular interest, as noise can be a sensitive probe for electronic correlations not detectable by first-moment current measurements. In addition to the expected Johnson-Nyquist thermal noise and nonequilibrium shot noise, low frequency (<100 kHz) noise measurements in Au/hBN/Au tunneling structures as a function of temperature and bias reveal the presence of thermally excited dynamic defects, as manifested through a flicker noise contribution at high bias that freezes out as temperature is decreased. In contrast, broad-band high frequency (∼250MHz – 580MHz) measurements on the same device show shot noise with no flicker noise contribution. The presence of the flicker noise through multiple fabrication approaches and processing treatments suggests that the fluctuators are in the hBN layer itself. Device-to-device variation and the approximate 1/f dependence of the flicker noise constrain the fluctuator density to on the order of a few per square micron.en_US
dc.identifier.citationZhao, Xuanhan, Zhou, Panpan, Chen, Liyang, et al.. "Tunneling noise and defects in exfoliated hexagonal boron nitride." <i>AIP Advances,</i> 9, no. 10 (2019) AIP Publishing LLC: https://doi.org/10.1063/1.5126129.en_US
dc.identifier.digitalTunneling-noiseen_US
dc.identifier.doihttps://doi.org/10.1063/1.5126129en_US
dc.identifier.urihttps://hdl.handle.net/1911/108041en_US
dc.language.isoengen_US
dc.publisherAIP Publishing LLCen_US
dc.rightsAll article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).en_US
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/).en_US
dc.titleTunneling noise and defects in exfoliated hexagonal boron nitrideen_US
dc.typeJournal articleen_US
dc.type.dcmiTexten_US
dc.type.publicationpublisher versionen_US
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