Method of making a nanoscale electronic device
dc.contributor.assignee | Rice University | en_US |
dc.contributor.publisher | United States Patent and Trademark Office | en_US |
dc.creator | Pang, Harry F. | en_US |
dc.creator | Tour, James M. | en_US |
dc.date.accessioned | 2015-05-04T19:05:38Z | |
dc.date.available | 2015-05-04T19:05:38Z | |
dc.date.filed | 2003-05-13 | en_US |
dc.date.issued | 2005-09-20 | en_US |
dc.description.abstract | The present invention relates to a method of making a nanoscale electronic device wherein said device comprises a gap between about 0.1 nm and about 100 nm between at least two conductors, semiconductors or the combination thereof. The method features complete assembly of electrical contacts before addition of a molecular component thereby preserving the integrity of the molecular electronic component and maintaining a well-formed gap. The gap produced is within the nanoscale regime, has uniform width and is further characterized by surfaces that are uniformly smooth. | en_US |
dc.digitization.specifications | This patent information was downloaded from the US Patent and Trademark website (http://www.uspto.gov/) as image-PDFs. The PDFs were OCRed for access purposes. | en_US |
dc.format.extent | 16 pp | en_US |
dc.identifier.citation | Pang, Harry F. and Tour, James M., "Method of making a nanoscale electronic device." Patent US6946336B2. issued 2005-09-20. Retrieved from https://hdl.handle.net/1911/79896. | |
dc.identifier.patentID | US6946336B2 | en_US |
dc.identifier.uri | https://hdl.handle.net/1911/79896 | |
dc.language.iso | eng | en_US |
dc.title | Method of making a nanoscale electronic device | en_US |
dc.type | Utility patent | en_US |
dc.type.dcmi | Text | en_US |
dc.type.genre | patents | en_US |
Files
Original bundle
1 - 1 of 1