Method of making a nanoscale electronic device
Date
2005-09-20
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Abstract
The present invention relates to a method of making a nanoscale electronic device wherein said device comprises a gap between about 0.1 nm and about 100 nm between at least two conductors, semiconductors or the combination thereof. The method features complete assembly of electrical contacts before addition of a molecular component thereby preserving the integrity of the molecular electronic component and maintaining a well-formed gap. The gap produced is within the nanoscale regime, has uniform width and is further characterized by surfaces that are uniformly smooth.
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Utility patent
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Citation
Pang, Harry F. and Tour, James M., "Method of making a nanoscale electronic device." Patent US6946336B2. issued 2005-09-20. Retrieved from https://hdl.handle.net/1911/79896.