Meniscus-Mask Lithography for Fabrication of Narrow Nanowires

dc.citation.firstpage2933en_US
dc.citation.issueNumber5en_US
dc.citation.journalTitleNano Lettersen_US
dc.citation.lastpage2937en_US
dc.citation.volumeNumber15en_US
dc.contributor.authorAbramova, Veraen_US
dc.contributor.authorSlesarev, Alexander S.en_US
dc.contributor.authorTour, James M.en_US
dc.contributor.orgSmalley Institute for Nanoscale Science and Technologyen_US
dc.date.accessioned2016-06-27T14:14:28Z
dc.date.available2016-06-27T14:14:28Z
dc.date.issued2015en_US
dc.description.abstractWe demonstrate the efficiency of meniscus-mask lithography (MML) for fabrication of precisely positioned nanowires in a variety of materials. Si, SiO2, Au, Cr, W, Ti, TiO2, and Al nanowires are fabricated and characterized. The average widths, depending on the materials, range from 6 to 16 nm. A broad range of materials and etching processes are used and the generality of approach suggests the applicability of MML to a majority of materials used in modern planar technology. High reproducibility of the MML method is shown and some fabrication issues specific to MML are addressed. Crossbar structures produced by MML demonstrate that junctions of nanowires could be fabricated as well, providing the building blocks required for fabrication of nanowire structures of varied planar geometry.en_US
dc.identifier.citationAbramova, Vera, Slesarev, Alexander S. and Tour, James M.. "Meniscus-Mask Lithography for Fabrication of Narrow Nanowires." <i>Nano Letters,</i> 15, no. 5 (2015) American Chemical Society: 2933-2937. http://dx.doi.org/10.1021/nl504716u.
dc.identifier.doihttp://dx.doi.org/10.1021/nl504716uen_US
dc.identifier.urihttps://hdl.handle.net/1911/90575
dc.language.isoengen_US
dc.publisherAmerican Chemical Society
dc.rightsThis is an open access article published under an ACS AuthorChoice License, which permits copying and redistribution of the article or any adaptations for non-commercial purposes.en_US
dc.rights.urihttp://pubs.acs.org/page/policy/authorchoice_termsofuse.htmlen_US
dc.subject.keywordmeniscus-mask lithographyen_US
dc.subject.keywordnanowiresen_US
dc.subject.keywordreactive ion etchingen_US
dc.titleMeniscus-Mask Lithography for Fabrication of Narrow Nanowiresen_US
dc.typeJournal articleen_US
dc.type.dcmiTexten_US
dc.type.publicationpublisher versionen_US
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