Ternary CuIn7Se11: Towards Ultra-Thin Layered Photodetectors and Photovoltaic Devices

dc.citation.firstpage7666en_US
dc.citation.issueNumber45en_US
dc.citation.journalTitleAdvanced Materialsen_US
dc.citation.lastpage7672en_US
dc.citation.volumeNumber26en_US
dc.contributor.authorLei, Sidongen_US
dc.contributor.authorSobhani, Alien_US
dc.contributor.authorWen, Fangfangen_US
dc.contributor.authorGeorge, Antonyen_US
dc.contributor.authorWang, Qizhongen_US
dc.contributor.authorHuang, Yihanen_US
dc.contributor.authorDong, Peien_US
dc.contributor.authorLi, Boen_US
dc.contributor.authorNajmaei, Sinaen_US
dc.contributor.authorBellah, Jamesen_US
dc.contributor.authorGupta, Gautamen_US
dc.contributor.authorMohite, Aditya D.en_US
dc.contributor.authorGe, Liehuien_US
dc.contributor.authorLou, Junen_US
dc.contributor.authorHalas, Naomi J.en_US
dc.contributor.authorVajtai, Roberten_US
dc.contributor.authorAjayan, Pulickelen_US
dc.date.accessioned2015-01-08T14:55:03Z
dc.date.available2015-01-08T14:55:03Z
dc.date.issued2014en_US
dc.description.abstract2D materials have been widely studied over the past decade for their potential applications in electronics and optoelectronics. In these materials, elemental composition plays a critical role in defining their physical properties. Here we report the first successful synthesis of individual high quality CuIn7Se11 (CIS) ternary 2D layers and demonstrate their potential use in photodetection applications. Photoconductivity measurements show an indirect bandgap of 1.1 eV for few-layered CIS, an external quantum efficiency of 88.0 % with 2 V bias across 2 μm channel with and a signal-to-noise ratio larger than 95 dB. By judicious choice of electrode materials, we demonstrate the possibility of layered CIS-based 2D photovoltaic devices. This study examines this ternary 2D layered system for the first time, demonstrating the clear potential for layered CIS in 2D material-based optoelectronic device applications.en_US
dc.identifier.citationLei, Sidong, Sobhani, Ali, Wen, Fangfang, et al.. "Ternary CuIn7Se11: Towards Ultra-Thin Layered Photodetectors and Photovoltaic Devices." <i>Advanced Materials,</i> 26, no. 45 (2014) Wiley: 7666-7672. http://dx.doi.org/10.1002/adma.201403342.
dc.identifier.doihttp://dx.doi.org/10.1002/adma.201403342en_US
dc.identifier.urihttps://hdl.handle.net/1911/78909
dc.language.isoengen_US
dc.publisherWiley
dc.rightsThis is an author's peer-reviewed final manuscript, as accepted by the publisher. The published article is copyrighted by Wiley.en_US
dc.subject.keywordcopper-indium-selenideen_US
dc.subject.keywordlayered materialsen_US
dc.subject.keywordphotodetectorsen_US
dc.subject.keywordphotovoltaicsen_US
dc.titleTernary CuIn7Se11: Towards Ultra-Thin Layered Photodetectors and Photovoltaic Devicesen_US
dc.typeJournal articleen_US
dc.type.dcmiTexten_US
dc.type.publicationpost-printen_US
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