Microwave photocurrent from the edge states of InAs/GaInSb bilayers

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dc.citation.articleNumber241301(R)en_US
dc.citation.issueNumber24en_US
dc.citation.journalTitlePhysical Review Ben_US
dc.citation.volumeNumber98en_US
dc.contributor.authorZhang, Jieen_US
dc.contributor.authorLi, Tingxinen_US
dc.contributor.authorDu, Rui-Ruien_US
dc.contributor.authorSullivan, Gerarden_US
dc.date.accessioned2019-01-18T16:26:52Zen_US
dc.date.available2019-01-18T16:26:52Zen_US
dc.date.issued2018en_US
dc.description.abstractMotivated by the recent low-temperature experiments on bulk FeSe, we study the electron correlation effects in a multiorbital model for this compound in the nematic phase using the U(1) slave-spin theory. We find that a finite nematic order helps to stabilize an orbital selective Mott phase. Moreover, we propose that when the d- and s-wave bond nematic orders are combined with the ferro-orbital order, there exists a surprisingly large orbital selectivity between the xz and yz orbitals even though the associated band splitting is relatively small. Our results explain the seemingly unusual observation of strong orbital selectivity in the nematic phase of FeSe, uncover new clues on the nature of the nematic order, and set the stage to elucidate the interplay between superconductivity and nematicity in iron-based superconductors.en_US
dc.identifier.citationZhang, Jie, Li, Tingxin, Du, Rui-Rui, et al.. "Microwave photocurrent from the edge states of InAs/GaInSb bilayers." <i>Physical Review B,</i> 98, no. 24 (2018) American Physical Society: https://doi.org/10.1103/PhysRevB.98.241301.en_US
dc.identifier.digitalPhysRevLett.121.227003en_US
dc.identifier.doihttps://doi.org/10.1103/PhysRevB.98.241301en_US
dc.identifier.urihttps://hdl.handle.net/1911/105096en_US
dc.language.isoengen_US
dc.publisherAmerican Physical Societyen_US
dc.rightsArticle is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.en_US
dc.titleMicrowave photocurrent from the edge states of InAs/GaInSb bilayersen_US
dc.typeJournal articleen_US
dc.type.dcmiTexten_US
dc.type.publicationpublisher versionen_US
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