Intrinsic carrier mobility of multi-layered MoS2 field-effect transistors on SiO2

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dc.citation.articleNumber123105
dc.citation.issueNumber12
dc.citation.journalTitleApplied Physics Letters
dc.citation.volumeNumber102
dc.contributor.authorPradhan, N.R.
dc.contributor.authorRhodes, D.
dc.contributor.authorZhang, Q.
dc.contributor.authorTalapatra, S.
dc.contributor.authorTerrones, M.
dc.contributor.authorAjayan, P.M.
dc.contributor.authorBalicas, L.
dc.date.accessioned2017-07-31T18:12:32Z
dc.date.available2017-07-31T18:12:32Z
dc.date.issued2013
dc.identifier.citationPradhan, N.R., Rhodes, D., Zhang, Q., et al.. "Intrinsic carrier mobility of multi-layered MoS2 field-effect transistors on SiO2." <i>Applied Physics Letters,</i> 102, no. 12 (2013) American Institute of Physics: http://dx.doi.org/10.1063/1.4799172.
dc.identifier.digitalIntrinsic_carrier_mobility
dc.identifier.doihttp://dx.doi.org/10.1063/1.4799172
dc.identifier.urihttps://hdl.handle.net/1911/95627
dc.language.isoeng
dc.publisherAmerican Institute of Physics
dc.rightsArticle is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
dc.titleIntrinsic carrier mobility of multi-layered MoS2 field-effect transistors on SiO2
dc.typeJournal article
dc.type.dcmiText
dc.type.publicationpublisher version
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