Intrinsic carrier mobility of multi-layered MoS2 field-effect transistors on SiO2

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dc.citation.articleNumber123105en_US
dc.citation.issueNumber12en_US
dc.citation.journalTitleApplied Physics Lettersen_US
dc.citation.volumeNumber102en_US
dc.contributor.authorPradhan, N.R.en_US
dc.contributor.authorRhodes, D.en_US
dc.contributor.authorZhang, Q.en_US
dc.contributor.authorTalapatra, S.en_US
dc.contributor.authorTerrones, M.en_US
dc.contributor.authorAjayan, P.M.en_US
dc.contributor.authorBalicas, L.en_US
dc.date.accessioned2017-07-31T18:12:32Zen_US
dc.date.available2017-07-31T18:12:32Zen_US
dc.date.issued2013en_US
dc.identifier.citationPradhan, N.R., Rhodes, D., Zhang, Q., et al.. "Intrinsic carrier mobility of multi-layered MoS2 field-effect transistors on SiO2." <i>Applied Physics Letters,</i> 102, no. 12 (2013) American Institute of Physics: http://dx.doi.org/10.1063/1.4799172.en_US
dc.identifier.digitalIntrinsic_carrier_mobilityen_US
dc.identifier.doihttp://dx.doi.org/10.1063/1.4799172en_US
dc.identifier.urihttps://hdl.handle.net/1911/95627en_US
dc.language.isoengen_US
dc.publisherAmerican Institute of Physicsen_US
dc.rightsArticle is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.en_US
dc.titleIntrinsic carrier mobility of multi-layered MoS2 field-effect transistors on SiO2en_US
dc.typeJournal articleen_US
dc.type.dcmiTexten_US
dc.type.publicationpublisher versionen_US
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