Intrinsic carrier mobility of multi-layered MoS2 field-effect transistors on SiO2
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2013
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American Institute of Physics
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Pradhan, N.R., Rhodes, D., Zhang, Q., et al.. "Intrinsic carrier mobility of multi-layered MoS2 field-effect transistors on SiO2." Applied Physics Letters, 102, no. 12 (2013) American Institute of Physics: http://dx.doi.org/10.1063/1.4799172.
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