Infrared photodetectors

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dc.contributor.assigneeRice University
dc.contributor.assigneeWilliam Marsh Rice University
dc.contributor.publisherUnited States Patent and Trademark Office
dc.creatorZheng, Bob Yi
dc.creatorZhao, Hangqi
dc.creatorCerjan, Benjamin
dc.creatorTanzid, Mehbuba
dc.creatorNordlander, Peter J.
dc.creatorHalas, Nancy J.
dc.date.accessioned2023-06-02T18:03:44Z
dc.date.available2023-06-02T18:03:44Z
dc.date.filed2020-01-12
dc.date.issued2023-05-16
dc.description.abstractAn infrared photodetector includes: a p-type and highly-doped silicon substrate; a metal structure disposed on the silicon substrate; a first electric contact to the silicon substrate; and a second electric contact to the metal structure.
dc.digitization.specificationsThis patent information was downloaded from the US Patent and Trademark website (http://www.uspto.gov/) as image-PDFs. The PDFs were OCRed for access purposes.
dc.format.extent15
dc.identifier.citationZheng, Bob Yi, Zhao, Hangqi, Cerjan, Benjamin, Tanzid, Mehbuba, Nordlander, Peter J. and Halas, Nancy J., "Infrared photodetectors." Patent US11652183B2. issued 2023-05-16. Retrieved from <a href="https://hdl.handle.net/1911/114900">https://hdl.handle.net/1911/114900</a>.
dc.identifier.patentIDUS11652183B2
dc.identifier.urihttps://hdl.handle.net/1911/114900
dc.language.isoeng
dc.language.isoEnglish
dc.titleInfrared photodetectors
dc.typeUtility patent
dc.type.dcmiText
dc.type.genrepatents
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