Infrared photodetectors
Date
2023-05-16
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Abstract
An infrared photodetector includes: a p-type and highly-doped silicon substrate; a metal structure disposed on the silicon substrate; a first electric contact to the silicon substrate; and a second electric contact to the metal structure.
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Utility patent
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Citation
Zheng, Bob Yi, Zhao, Hangqi, Cerjan, Benjamin, Tanzid, Mehbuba, Nordlander, Peter J. and Halas, Nancy J., "Infrared photodetectors." Patent US11652183B2. issued 2023-05-16. Retrieved from https://hdl.handle.net/1911/114900.