Images of Edge Current inﾠInAs/GaSbﾠQuantum Wells

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dc.citation.articleNumber26804en_US
dc.citation.issueNumber2en_US
dc.citation.journalTitlePhysical Review Lettersen_US
dc.citation.volumeNumber113en_US
dc.contributor.authorSpanton, Eric M.en_US
dc.contributor.authorNowack, Katja C.en_US
dc.contributor.authorDu, Lingjieen_US
dc.contributor.authorSullivan, Gerarden_US
dc.contributor.authorDu, Rui-Ruien_US
dc.contributor.authorMoler, Kathryn A.en_US
dc.date.accessioned2017-06-01T18:53:00Zen_US
dc.date.available2017-06-01T18:53:00Zen_US
dc.date.issued2014en_US
dc.description.abstractQuantum spin Hall devices with edges much longer than several microns do not display ballistic transport; that is, their measured conductances are much less thanﾠe2/hﾠper edge. We imaged edge currents inﾠInAs/GaSbﾠquantum wells with long edges and determined an effective edge resistance. Surprisingly, although the effective edge resistance is much greater thanﾠh/e2, it is independent of temperature up to 30ﾠK within experimental resolution. Known candidate scattering mechanisms do not explain our observation of an effective edge resistance that is large yet temperature independent.en_US
dc.identifier.citationSpanton, Eric M., Nowack, Katja C., Du, Lingjie, et al.. "Images of Edge Current inﾠInAs/GaSbﾠQuantum Wells." <i>Physical Review Letters,</i> 113, no. 2 (2014) American Physical Society: https://doi.org/10.1103/PhysRevLett.113.026804.en_US
dc.identifier.doihttps://doi.org/10.1103/PhysRevLett.113.026804en_US
dc.identifier.urihttps://hdl.handle.net/1911/94750en_US
dc.language.isoengen_US
dc.publisherAmerican Physical Societyen_US
dc.rightsArticle is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.en_US
dc.titleImages of Edge Current inﾠInAs/GaSbﾠQuantum Wellsen_US
dc.typeJournal articleen_US
dc.type.dcmiTexten_US
dc.type.publicationpublisher versionen_US
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