Sequential insulator-metal-insulator phase transitions of VO2 triggered by hydrogen doping

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dc.citation.articleNumber125130en_US
dc.citation.issueNumber12en_US
dc.citation.journalTitlePhysical Review Ben_US
dc.citation.volumeNumber96en_US
dc.contributor.authorChen, Shien_US
dc.contributor.authorWang, Zhaowuen_US
dc.contributor.authorFan, Leleen_US
dc.contributor.authorChen, Yuliangen_US
dc.contributor.authorRen, Huien_US
dc.contributor.authorJi, Hengen_US
dc.contributor.authorNatelson, Douglasen_US
dc.contributor.authorHuang, Yingyingen_US
dc.contributor.authorJiang, Junen_US
dc.contributor.authorZou, Chongwenen_US
dc.date.accessioned2017-10-27T13:26:31Zen_US
dc.date.available2017-10-27T13:26:31Zen_US
dc.date.issued2017en_US
dc.description.abstractAs a typical correlated oxide, V O 2 has attracted significant attentions due to its pronounced thermal-driven metal-insulator transition. Regulating electronic density through electron doping is an effective way to modulate the balance between competing phases in strongly correlated materials. However, the electron-doping triggered phase transitions in V O 2 as well as the intermediate states are not fully explored. Here, we report a controlled and reversible phase transition in V O 2 films by continuous hydrogen doping. Metallic and insulating phases are successively observed at room temperature as the doping concentration increases. The doped electrons linearly occupy V 3 d -O 2 p hybridized orbitals and consequently modulate the filling of the V O 2 conduction band edge states, resulting in the electron-doping driven continuous phase transitions. These results suggest the exceptional sensitivity of V O 2 electronic properties to electron concentration and orbital occupancy, providing key information for the phase transition mechanism.en_US
dc.identifier.citationChen, Shi, Wang, Zhaowu, Fan, Lele, et al.. "Sequential insulator-metal-insulator phase transitions of VO2 triggered by hydrogen doping." <i>Physical Review B,</i> 96, no. 12 (2017) American Physical Society: https://doi.org/10.1103/PhysRevB.96.125130.en_US
dc.identifier.digitalSequential_insulator-metal-insulator_phase_transitionsen_US
dc.identifier.doihttps://doi.org/10.1103/PhysRevB.96.125130en_US
dc.identifier.urihttps://hdl.handle.net/1911/97813en_US
dc.language.isoengen_US
dc.publisherAmerican Physical Societyen_US
dc.rightsArticle is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.en_US
dc.titleSequential insulator-metal-insulator phase transitions of VO2 triggered by hydrogen dopingen_US
dc.typeJournal articleen_US
dc.type.dcmiTexten_US
dc.type.publicationpublisher versionen_US
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