Phonon-Assisted Hot Carrier Generation in Plasmonic Semiconductor Systems

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dc.citation.firstpage1083en_US
dc.citation.issueNumber2en_US
dc.citation.journalTitleNano Lettersen_US
dc.citation.lastpage1089en_US
dc.citation.volumeNumber21en_US
dc.contributor.authorHattori, Yocefuen_US
dc.contributor.authorMeng, Jieen_US
dc.contributor.authorZheng, Kaiboen_US
dc.contributor.authorMeier de Andrade, Ageoen_US
dc.contributor.authorKullgren, Jollaen_US
dc.contributor.authorBroqvist, Peteren_US
dc.contributor.authorNordlander, Peteren_US
dc.contributor.authorSá, Jacintoen_US
dc.date.accessioned2021-02-24T19:15:47Zen_US
dc.date.available2021-02-24T19:15:47Zen_US
dc.date.issued2021en_US
dc.description.abstractPlasmonic materials have optical cross sections that exceed by 10-fold their geometric sizes, making them uniquely suitable to convert light into electrical charges. Harvesting plasmon-generated hot carriers is of interest for the broad fields of photovoltaics and photocatalysis; however, their direct utilization is limited by their ultrafast thermalization in metals. To prolong the lifetime of hot carriers, one can place acceptor materials, such as semiconductors, in direct contact with the plasmonic system. Herein, we report the effect of operating temperature on hot electron generation and transfer to a suitable semiconductor. We found that an increase in the operation temperature improves hot electron harvesting in a plasmonic semiconductor hybrid system, contrasting what is observed on photodriven processes in nonplasmonic systems. The effect appears to be related to an enhancement in hot carrier generation due to phonon coupling. This discovery provides a new strategy for optimization of photodriven energy production and chemical synthesis.en_US
dc.identifier.citationHattori, Yocefu, Meng, Jie, Zheng, Kaibo, et al.. "Phonon-Assisted Hot Carrier Generation in Plasmonic Semiconductor Systems." <i>Nano Letters,</i> 21, no. 2 (2021) American Chemical Society: 1083-1089. https://doi.org/10.1021/acs.nanolett.0c04419.en_US
dc.identifier.digitalacs-nanolett-0c04419en_US
dc.identifier.doihttps://doi.org/10.1021/acs.nanolett.0c04419en_US
dc.identifier.urihttps://hdl.handle.net/1911/110088en_US
dc.language.isoengen_US
dc.publisherAmerican Chemical Societyen_US
dc.rightsThis is an open access article published under a Creative Commons Attribution (CC-BY)License, which permits unrestricted use, distribution and reproduction in any medium,provided the author and source are cited.en_US
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/en_US
dc.titlePhonon-Assisted Hot Carrier Generation in Plasmonic Semiconductor Systemsen_US
dc.typeJournal articleen_US
dc.type.dcmiTexten_US
dc.type.publicationpublisher versionen_US
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