Low-temperature conductivity of weakly interacting quantum spin Hall edges in strained-layer InAs/GaInSb

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dc.citation.articleNumber241406(R)en_US
dc.citation.issueNumber24en_US
dc.citation.journalTitlePhysical Review Ben_US
dc.citation.volumeNumber96en_US
dc.contributor.authorLi, Tingxinen_US
dc.contributor.authorWang, Pengjieen_US
dc.contributor.authorSullivan, Gerarden_US
dc.contributor.authorLin, Xien_US
dc.contributor.authorDu, Rui-Ruien_US
dc.date.accessioned2018-07-11T15:59:27Zen_US
dc.date.available2018-07-11T15:59:27Zen_US
dc.date.issued2017en_US
dc.description.abstractWe report low-temperature transport measurements in strainedﾠInAs/Ga0.68In0.32Sbﾠquantum wells, which supports time-reversal symmetry-protected helical edge states. The temperature and bias voltage dependence of the helical edge conductance for devices of various sizes are consistent with the theoretical expectation of a weakly interacting helical edge state. Moreover, we found that the magnetoresistance of the helical edge states is related to the edge interaction effect and the disorder strength.en_US
dc.identifier.citationLi, Tingxin, Wang, Pengjie, Sullivan, Gerard, et al.. "Low-temperature conductivity of weakly interacting quantum spin Hall edges in strained-layer InAs/GaInSb." <i>Physical Review B,</i> 96, no. 24 (2017) American Physical Society: https://doi.org/10.1103/PhysRevB.96.241406.en_US
dc.identifier.doihttps://doi.org/10.1103/PhysRevB.96.241406en_US
dc.identifier.urihttps://hdl.handle.net/1911/102370en_US
dc.language.isoengen_US
dc.publisherAmerican Physical Societyen_US
dc.rightsArticle is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.en_US
dc.titleLow-temperature conductivity of weakly interacting quantum spin Hall edges in strained-layer InAs/GaInSben_US
dc.typeJournal articleen_US
dc.type.dcmiTexten_US
dc.type.publicationpublisher versionen_US
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