Plasmon induced hot carrier device, method for using the same, and method for manufacturing the same

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dc.contributor.assigneeRice Universityeng
dc.contributor.publisherUnited States Patent and Trademark Officeeng
dc.creatorKnight, Mark Williameng
dc.creatorKhakestar, Heidar Sobhanieng
dc.creatorNordlander, Petereng
dc.creatorHalas, Nancy J.eng
dc.date.accessioned2016-02-04T21:57:34Z
dc.date.available2016-02-04T21:57:34Z
dc.date.filed2011-11-11
dc.date.issued2015-12-01
dc.description.abstractIn general, the invention relates to a unit that includes a semiconductor and a plasmonic material disposed on the semiconductor, where a potential barrier is formed between the plasmonic material and the semiconductor. The unit further includes an insulator disposed on the semiconductor and adjacent to the plasmonic material and a transparent conductor disposed on the plasmonic material, where, upon illumination, the plasmonic material is excited resulting the excitation of an electron with sufficient energy to overcome the potential barrier.eng
dc.digitization.specificationsThis patent information was downloaded from the US Patent and Trademark website (http://www.uspto.gov/) as image-PDFs. The PDFs were OCRed for access purposeseng
dc.format.extent15 ppeng
dc.identifier.citationKnight, Mark William, Khakestar, Heidar Sobhani, Nordlander, Peter and Halas, Nancy J., "Plasmon induced hot carrier device, method for using the same, and method for manufacturing the same." Patent US9202952B2. issued 2015-12-01. Retrieved from <a href="https://hdl.handle.net/1911/88363">https://hdl.handle.net/1911/88363</a>.*
dc.identifier.patentIDUS9202952B2eng
dc.identifier.urihttps://hdl.handle.net/1911/88363
dc.language.isoengeng
dc.titlePlasmon induced hot carrier device, method for using the same, and method for manufacturing the sameeng
dc.typeUtility patenteng
dc.type.dcmiTexteng
dc.type.genrepatentseng
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