Plasmon induced hot carrier device, method for using the same, and method for manufacturing the same
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In general, the invention relates to a unit that includes a semiconductor and a plasmonic material disposed on the semiconductor, where a potential barrier is formed between the plasmonic material and the semiconductor. The unit further includes an insulator disposed on the semiconductor and adjacent to the plasmonic material and a transparent conductor disposed on the plasmonic material, where, upon illumination, the plasmonic material is excited resulting the excitation of an electron with sufficient energy to overcome the potential barrier.
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Knight, Mark William, Khakestar, Heidar Sobhani, Nordlander, Peter and Halas, Nancy J., "Plasmon induced hot carrier device, method for using the same, and method for manufacturing the same." Patent US9202952B2. issued 2015-12-01. Retrieved from https://hdl.handle.net/1911/88363.