Robust Helical Edge Transport in Gated InAs/GaSb Bilayers

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dc.citation.firstpage96802en_US
dc.citation.journalTitlePhyscial Review Lettersen_US
dc.citation.volumeNumber114en_US
dc.contributor.authorDu, Lingjieen_US
dc.contributor.authorKnez, Ivanen_US
dc.contributor.authorSullivan, Gerarden_US
dc.contributor.authorDu, Rui-Ruien_US
dc.date.accessioned2015-05-15T17:06:33Zen_US
dc.date.available2015-05-15T17:06:33Zen_US
dc.date.issued2015en_US
dc.description.abstractWe have engineered electron-hole bilayers of inverted InAs/GaSb quantum wells, using dilute silicon impurity doping to suppress residual bulk conductance. We have observed robust helical edge states with wide conductance plateaus precisely quantized to 2e2/h in mesoscopic Hall samples. On the other hand, in larger samples the edge conductance is found to be inversely proportional to the edge length. These characteristics persist in a wide temperature range and show essentially no temperature dependence. The quantized plateaus persist to a 12ﾠT applied in-plane field; the conductance increases from 2e2/h in strong perpendicular fields manifesting chiral edge transport. Our study presents a compelling case for exotic properties of a one-dimensional helical liquid on the edge of InAs/GaSb bilayers.en_US
dc.identifier.citationDu, Lingjie, Knez, Ivan, Sullivan, Gerard, et al.. "Robust Helical Edge Transport in Gated InAs/GaSb Bilayers." <i>Physcial Review Letters,</i> 114, (2015) American Physical Society: 96802. http://dx.doi.org/10.1103/PhysRevLett.114.096802.en_US
dc.identifier.doihttp://dx.doi.org/10.1103/PhysRevLett.114.096802en_US
dc.identifier.urihttps://hdl.handle.net/1911/80218en_US
dc.language.isoengen_US
dc.publisherAmerican Physical Societyen_US
dc.rightsArticle is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.en_US
dc.titleRobust Helical Edge Transport in Gated InAs/GaSb Bilayersen_US
dc.typeJournal articleen_US
dc.type.dcmiTexten_US
dc.type.publicationpublisher versionen_US
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