Magnetic domain structures of focused ion beam-patterned cobalt films using scanning ion microscopy with polarization analysis

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dc.citation.firstpage6527en_US
dc.citation.journalTitleJournal of Applied Physicsen_US
dc.citation.volumeNumber95en_US
dc.contributor.authorLi, J.en_US
dc.contributor.authorRau, C.en_US
dc.contributor.orgRice Quantum Instituteen_US
dc.contributor.orgCenter for Nanoscience and Technologyen_US
dc.date.accessioned2015-04-30T16:55:43Zen_US
dc.date.available2015-04-30T16:55:43Zen_US
dc.date.issued2004en_US
dc.description.abstractStudies of magnetic domain distributions in patterned magnetic materials are of pivotal importance in the areas of ultrahigh density magnetic recording, MRAM design, and miniaturized magnetic sensor arrays. Scanning ion microscopy with polarizationanalysis (SIMPA) is used to perform in situ topographic and magnetic domain imaging and focused ion beam(FIB) patterning. For FIB-patterned 30 nm thick Co films, it is found that rectangular Co bars of sizes between 10–30 μm exhibit S type, whereas circular shaped magnetic elements show C type micromagnetic magnetization patterns. It is shown that SIMPA provides a simple way to directly identify different micromagnetic domain patterns.en_US
dc.identifier.citationLi, J. and Rau, C.. "Magnetic domain structures of focused ion beam-patterned cobalt films using scanning ion microscopy with polarization analysis." <i>Journal of Applied Physics,</i> 95, (2004) AIP Publishing LLC: 6527. http://dx.doi.org/10.1063/1.1689433.en_US
dc.identifier.doihttp://dx.doi.org/10.1063/1.1689433en_US
dc.identifier.urihttps://hdl.handle.net/1911/79700en_US
dc.language.isoengen_US
dc.publisherAIP Publishing LLCen_US
dc.rightsThis is an author's peer-reviewed final manuscript, as accepted by the publisher. The published article is copyrighted by AIP Publishing LLC.en_US
dc.titleMagnetic domain structures of focused ion beam-patterned cobalt films using scanning ion microscopy with polarization analysisen_US
dc.typeJournal articleen_US
dc.type.dcmiTexten_US
dc.type.publicationpost-printen_US
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