Andreev Reflection of Helical Edge Modes in InAs=GaSb Quantum Spin Hall Insulator

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dc.citation.firstpage186603en_US
dc.citation.journalTitlePhysical Review Lettersen_US
dc.citation.volumeNumber109en_US
dc.contributor.authorKnez, Ivanen_US
dc.contributor.authorDu, Rui-Ruien_US
dc.contributor.authorSullivan, Gerarden_US
dc.date.accessioned2012-11-08T14:51:05Zen_US
dc.date.available2012-11-08T14:51:05Zen_US
dc.date.issued2012en_US
dc.description.abstractWe present an experimental study of S−N−S junctions, with N being a quantum spin Hall insulator made of InAs/GaSb. A front gate is used to vary the Fermi level into the minigap, where helical edge modes exist [Phys. Rev. Lett. 107, 136603 (2011)]. In this regime we observe a ∼2e2/h Andreev conductance peak, consistent with a perfect Andreev reflection on the helical edge modes predicted by theories. The peak diminishes under a small applied magnetic field due to the breaking of time-reversal symmetry. This work thus demonstrates the helical property of the edge modes in a quantum spin Hall insulator.en_US
dc.embargo.termsnoneen_US
dc.identifier.citationKnez, Ivan, Du, Rui-Rui and Sullivan, Gerard. "Andreev Reflection of Helical Edge Modes in InAs=GaSb Quantum Spin Hall Insulator." <i>Physical Review Letters,</i> 109, (2012) American Physical Society: 186603. http://dx.doi.org/10.1103/PhysRevLett.109.186603.en_US
dc.identifier.doihttp://dx.doi.org/10.1103/PhysRevLett.109.186603en_US
dc.identifier.urihttps://hdl.handle.net/1911/68347en_US
dc.language.isoengen_US
dc.publisherAmerican Physical Societyen_US
dc.rightsArticle is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.en_US
dc.titleAndreev Reflection of Helical Edge Modes in InAs=GaSb Quantum Spin Hall Insulatoren_US
dc.typeJournal articleen_US
dc.type.dcmiTexten_US
dc.type.publicationpublisher versionen_US
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