Hall effect in gated single-wall carbon nanotube films

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dc.citation.articleNumber101en_US
dc.citation.journalTitleScientific Reportsen_US
dc.citation.volumeNumber12en_US
dc.contributor.authorYomogida, Yoheien_US
dc.contributor.authorHoriuchi, Kanakoen_US
dc.contributor.authorOkada, Ryotaroen_US
dc.contributor.authorKawai, Hidekien_US
dc.contributor.authorIchinose, Yotaen_US
dc.contributor.authorNishidome, Hiroyukien_US
dc.contributor.authorUeji, Kanen_US
dc.contributor.authorKomatsu, Natsumien_US
dc.contributor.authorGao, Weiluen_US
dc.contributor.authorKono, Junichiroen_US
dc.contributor.authorYanagi, Kazuhiroen_US
dc.date.accessioned2022-01-21T16:24:07Zen_US
dc.date.available2022-01-21T16:24:07Zen_US
dc.date.issued2022en_US
dc.description.abstractThe presence of hopping carriers and grain boundaries can sometimes lead to anomalous carrier types and density overestimation in Hall-effect measurements. Previous Hall-effect studies on carbon nanotube films reported unreasonably large carrier densities without independent assessments of the carrier types and densities. Here, we have systematically investigated the validity of Hall-effect results for a series of metallic, semiconducting, and metal–semiconductor-mixed single-wall carbon nanotube films. With carrier densities controlled through applied gate voltages, we were able to observe the Hall effect both in the n- and p-type regions, detecting opposite signs in the Hall coefficient. By comparing the obtained carrier types and densities against values derived from simultaneous field-effect-transistor measurements, we found that, while the Hall carrier types were always correct, the Hall carrier densities were overestimated by up to four orders of magnitude. This significant overestimation indicates that thin films of one-dimensional SWCNTs are quite different from conventional hopping transport systems.en_US
dc.identifier.citationYomogida, Yohei, Horiuchi, Kanako, Okada, Ryotaro, et al.. "Hall effect in gated single-wall carbon nanotube films." <i>Scientific Reports,</i> 12, (2022) Springer Nature: https://doi.org/10.1038/s41598-021-03911-7.en_US
dc.identifier.digitals41598-021-03911-7en_US
dc.identifier.doihttps://doi.org/10.1038/s41598-021-03911-7en_US
dc.identifier.urihttps://hdl.handle.net/1911/111940en_US
dc.language.isoengen_US
dc.publisherSpringer Natureen_US
dc.rightsThis article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons licence, and indicate if changes were made. The images or other third party material in this article are included in the article's Creative Commons licence, unless indicated otherwise in a credit line to the material. If material is not included in the article's Creative Commons licence and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder.en_US
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/en_US
dc.titleHall effect in gated single-wall carbon nanotube filmsen_US
dc.typeJournal articleen_US
dc.type.dcmiTexten_US
dc.type.publicationpublisher versionen_US
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