Observation of Edge Transport in the Disordered Regime of Topologically Insulating InAs/GaSb Quantum Wells

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dc.citation.firstpage26602en_US
dc.citation.issueNumber2en_US
dc.citation.journalTitlePhysical Review Lettersen_US
dc.citation.volumeNumber112en_US
dc.contributor.authorKnez, Ivanen_US
dc.contributor.authorRettner, Charles T.en_US
dc.contributor.authorYang, See-Hunen_US
dc.contributor.authorParkin, Stuart S.P.en_US
dc.contributor.authorDu, Lingjieen_US
dc.contributor.authorDu, Rui-Ruien_US
dc.contributor.authorSullivan, Gerarden_US
dc.date.accessioned2014-01-21T20:19:37Zen_US
dc.date.available2014-01-21T20:19:37Zen_US
dc.date.issued2014-01en_US
dc.description.abstractWe observe edge transport in the topologically insulating InAs=GaSb system in the disordered regime. Using asymmetric current paths we show that conduction occurs exclusively along the device edge, exhibiting a large Hall signal at zero magnetic fields, while for symmetric current paths, the conductance between the two mesoscopicly separated probes is quantized to 2e2=h. Both quantized and self-averaged transport show resilience to magnetic fields, and are temperature independent for temperatures between 20 mK and 1 K.en_US
dc.identifier.citationKnez, Ivan, Rettner, Charles T., Yang, See-Hun, et al.. "Observation of Edge Transport in the Disordered Regime of Topologically Insulating InAs/GaSb Quantum Wells." <i>Physical Review Letters,</i> 112, no. 2 (2014) American Physical Society: 26602. http://dx.doi.org/10.1103/PhysRevLett.112.026602.en_US
dc.identifier.doihttp://dx.doi.org/10.1103/PhysRevLett.112.026602en_US
dc.identifier.urihttps://hdl.handle.net/1911/75347en_US
dc.language.isoengen_US
dc.publisherAmerican Physical Societyen_US
dc.rightsArticle is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.en_US
dc.titleObservation of Edge Transport in the Disordered Regime of Topologically Insulating InAs/GaSb Quantum Wellsen_US
dc.typeJournal articleen_US
dc.type.dcmiTexten_US
dc.type.publicationpublisher versionen_US
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