Trapped-ion quantum simulation of electron transfer models with tunable dissipation

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dc.citation.articleNumbereads8011en_US
dc.citation.issueNumber51en_US
dc.citation.journalTitleScience Advancesen_US
dc.citation.volumeNumber10en_US
dc.contributor.authorSo, Visalen_US
dc.contributor.authorDuraisamy Suganthi, Midhunaen_US
dc.contributor.authorMenon, Abhisheken_US
dc.contributor.authorZhu, Mingjianen_US
dc.contributor.authorZhuravel, Romanen_US
dc.contributor.authorPu, Hanen_US
dc.contributor.authorWolynes, Peter G.en_US
dc.contributor.authorOnuchic, José N.en_US
dc.contributor.authorPagano, Guidoen_US
dc.contributor.orgCenter for Theoretical Biological Physicsen_US
dc.date.accessioned2025-01-09T20:17:05Zen_US
dc.date.available2025-01-09T20:17:05Zen_US
dc.date.issued2024en_US
dc.description.abstractElectron transfer is at the heart of many fundamental physical, chemical, and biochemical processes essential for life. The exact simulation of these reactions is often hindered by the large number of degrees of freedom and by the essential role of quantum effects. Here, we experimentally simulate a paradigmatic model of molecular electron transfer using a multispecies trapped-ion crystal, where the donor-acceptor gap, the electronic and vibronic couplings, and the bath relaxation dynamics can all be controlled independently. By manipulating both the ground-state and optical qubits, we observe the real-time dynamics of the spin excitation, measuring the transfer rate in several regimes of adiabaticity and relaxation dynamics. Our results provide a testing ground for increasingly rich models of molecular excitation transfer processes that are relevant for molecular electronics and light-harvesting systems.en_US
dc.identifier.citationSo, V., Duraisamy Suganthi, M., Menon, A., Zhu, M., Zhuravel, R., Pu, H., Wolynes, P. G., Onuchic, J. N., & Pagano, G. (2024). Trapped-ion quantum simulation of electron transfer models with tunable dissipation. Science Advances, 10(51), eads8011. https://doi.org/10.1126/sciadv.ads8011en_US
dc.identifier.digitalsciadv-ads8011en_US
dc.identifier.doihttps://doi.org/10.1126/sciadv.ads8011en_US
dc.identifier.urihttps://hdl.handle.net/1911/118151en_US
dc.language.isoengen_US
dc.publisherAAASen_US
dc.rightsExcept where otherwise noted, this work is licensed under a Creative Commons Attribution (CC BY) license. Permission to reuse, publish, or reproduce the work beyond the terms of the license or beyond the bounds of fair use or other exemptions to copyright law must be obtained from the copyright holder.en_US
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/en_US
dc.titleTrapped-ion quantum simulation of electron transfer models with tunable dissipationen_US
dc.typeJournal articleen_US
dc.type.dcmiTexten_US
dc.type.publicationpublisher versionen_US
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