Tuning Edge States in Strained-Layer InAs/GaInSb Quantum Spin Hall Insulators

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dc.citation.articleNumber56803
dc.citation.issueNumber5
dc.citation.journalTitlePhysical Review Letters
dc.citation.volumeNumber119
dc.contributor.authorDu, Lingjie
dc.contributor.authorLi, Tingxin
dc.contributor.authorLou, Wenkai
dc.contributor.authorWu, Xingjun
dc.contributor.authorLiu, Xiaoxue
dc.contributor.authorHan, Zhongdong
dc.contributor.authorZhang, Chi
dc.contributor.authorSullivan, Gerard
dc.contributor.authorIkhlassi, Amal
dc.contributor.authorChang, Kai
dc.contributor.authorDu, Rui-Rui
dc.date.accessioned2017-10-06T18:43:16Z
dc.date.available2017-10-06T18:43:16Z
dc.date.issued2017
dc.description.abstractWe report on a class of quantum spin Hall insulators (QSHIs) in strained-layer InAs / GaInSb quantum wells, in which the bulk gaps are enhanced up to fivefold as compared to the binary InAs / GaSb QSHI. Remarkably, with consequently increasing edge velocity, the edge conductance at zero and applied magnetic fields manifests time reversal symmetry-protected properties consistent with the Z 2 topological insulator. The InAs / GaInSb bilayers offer a much sought-after platform for future studies and applications of the QSHI.
dc.identifier.citationDu, Lingjie, Li, Tingxin, Lou, Wenkai, et al.. "Tuning Edge States in Strained-Layer InAs/GaInSb Quantum Spin Hall Insulators." <i>Physical Review Letters,</i> 119, no. 5 (2017) American Physical Society: https://doi.org/10.1103/PhysRevLett.119.056803.
dc.identifier.digitalTuning_Edge_States
dc.identifier.doihttps://doi.org/10.1103/PhysRevLett.119.056803
dc.identifier.urihttps://hdl.handle.net/1911/97777
dc.language.isoeng
dc.publisherAmerican Physical Society
dc.rightsArticle is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
dc.titleTuning Edge States in Strained-Layer InAs/GaInSb Quantum Spin Hall Insulators
dc.typeJournal article
dc.type.dcmiText
dc.type.publicationpublisher version
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