Tuning Edge States in Strained-Layer InAs/GaInSb Quantum Spin Hall Insulators
| dc.citation.articleNumber | 56803 | en_US |
| dc.citation.issueNumber | 5 | en_US |
| dc.citation.journalTitle | Physical Review Letters | en_US |
| dc.citation.volumeNumber | 119 | en_US |
| dc.contributor.author | Du, Lingjie | en_US |
| dc.contributor.author | Li, Tingxin | en_US |
| dc.contributor.author | Lou, Wenkai | en_US |
| dc.contributor.author | Wu, Xingjun | en_US |
| dc.contributor.author | Liu, Xiaoxue | en_US |
| dc.contributor.author | Han, Zhongdong | en_US |
| dc.contributor.author | Zhang, Chi | en_US |
| dc.contributor.author | Sullivan, Gerard | en_US |
| dc.contributor.author | Ikhlassi, Amal | en_US |
| dc.contributor.author | Chang, Kai | en_US |
| dc.contributor.author | Du, Rui-Rui | en_US |
| dc.date.accessioned | 2017-10-06T18:43:16Z | en_US |
| dc.date.available | 2017-10-06T18:43:16Z | en_US |
| dc.date.issued | 2017 | en_US |
| dc.description.abstract | We report on a class of quantum spin Hall insulators (QSHIs) in strained-layer InAs / GaInSb quantum wells, in which the bulk gaps are enhanced up to fivefold as compared to the binary InAs / GaSb QSHI. Remarkably, with consequently increasing edge velocity, the edge conductance at zero and applied magnetic fields manifests time reversal symmetry-protected properties consistent with the Z 2 topological insulator. The InAs / GaInSb bilayers offer a much sought-after platform for future studies and applications of the QSHI. | en_US |
| dc.identifier.citation | Du, Lingjie, Li, Tingxin, Lou, Wenkai, et al.. "Tuning Edge States in Strained-Layer InAs/GaInSb Quantum Spin Hall Insulators." <i>Physical Review Letters,</i> 119, no. 5 (2017) American Physical Society: https://doi.org/10.1103/PhysRevLett.119.056803. | en_US |
| dc.identifier.digital | Tuning_Edge_States | en_US |
| dc.identifier.doi | https://doi.org/10.1103/PhysRevLett.119.056803 | en_US |
| dc.identifier.uri | https://hdl.handle.net/1911/97777 | en_US |
| dc.language.iso | eng | en_US |
| dc.publisher | American Physical Society | en_US |
| dc.rights | Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. | en_US |
| dc.title | Tuning Edge States in Strained-Layer InAs/GaInSb Quantum Spin Hall Insulators | en_US |
| dc.type | Journal article | en_US |
| dc.type.dcmi | Text | en_US |
| dc.type.publication | publisher version | en_US |
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