Faculty Publications

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https://hdl.handle.net/1911/75173
This collection includes faculty journal articles deposited per Rice's Open Access Policy and additional faculty work. Items found in this collection can also be found in the authors' departmental faculty publication collections.

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Browsing Faculty Publications by Subject "2D materials"

Now showing 1 - 3 of 3
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    Carbon Nanotubes and Related Nanomaterials: Critical Advances and Challenges for Synthesis toward Mainstream Commercial Applications
    (American Chemical Society, 2018) Rao, Rahul; Pint, Cary L.; Islam, Ahmad E.; Weatherup, Robert S.; Hofmann, Stephan; Meshot, Eric R.; Wu, Fanqi; Zhou, Chongwu; Dee, Nicholas; Amama, Placidus B.; Carpena-Nuñez, Jennifer; Shi, Wenbo; Plata, Desiree L.; Penev, Evgeni S.; Yakobson, Boris I.; Balbuena, Perla B.; Bichara, Christophe; Futaba, Don N.; Noda, Suguru; Shin, Homin; Kim, Keun Su; Simard, Benoit; Mirri, Francesca; Pasquali, Matteo; Fornasiero, Francesco; Kauppinen, Esko I.; Arnold, Michael; Cola, Baratunde A.; Nikolaev, Pavel; Arepalli, Sivaram; Cheng, Hui-Ming; Zakharov, Dmitri N.; Stach, Eric A.; Zhang, Jin; Wei, Fei; Terrones, Mauricio; Geohegan, David B.; Maruyama, Benji; Maruyama, Shigeo; Li, Yan; Adams, W. Wade; Hart, A. John
    Advances in the synthesis and scalable manufacturing of single-walled carbon nanotubes (SWCNTs) remain critical to realizing many important commercial applications. Here we review recent breakthroughs in the synthesis of SWCNTs and highlight key ongoing research areas and challenges. A few key applications that capitalize on the properties of SWCNTs are also reviewed with respect to the recent synthesis breakthroughs and ways in which synthesis science can enable advances in these applications. While the primary focus of this review is on the science framework of SWCNT growth, we draw connections to mechanisms underlying the synthesis of other 1D and 2D materials such as boron nitride nanotubes and graphene.
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    Electric Double Layer Field-Effect Transistors Using Two-Dimensional (2D) Layers of Copper Indium Selenide (CuIn7Se11)
    (MDPI, 2019) Patil, Prasanna D.; Ghosh, Sujoy; Wasala, Milinda; Lei, Sidong; Vajtai, Robert; Ajayan, Pulickel M.; Talapatra, Saikat
    Innovations in the design of field-effect transistor (FET) devices will be the key to future application development related to ultrathin and low-power device technologies. In order to boost the current semiconductor device industry, new device architectures based on novel materials and system need to be envisioned. Here we report the fabrication of electric double layer field-effect transistors (EDL-FET) with two-dimensional (2D) layers of copper indium selenide (CuIn7Se11) as the channel material and an ionic liquid electrolyte (1-Butyl-3-methylimidazolium hexafluorophosphate (BMIM-PF6)) as the gate terminal. We found one order of magnitude improvement in the on-off ratio, a five- to six-times increase in the field-effect mobility, and two orders of magnitude in the improvement in the subthreshold swing for ionic liquid gated devices as compared to silicon dioxide (SiO2) back gates. We also show that the performance of EDL-FETs can be enhanced by operating them under dual (top and back) gate conditions. Our investigations suggest that the performance of CuIn7Se11 FETs can be significantly improved when BMIM-PF6 is used as a top gate material (in both single and dual gate geometry) instead of the conventional dielectric layer of the SiO2 gate. These investigations show the potential of 2D material-based EDL-FETs in developing active components of future electronics needed for low-power applications.
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    Nanoantenna-Enhanced Light-Matter Interaction in Atomically Thin WS2
    (American Chemical Society, 2015) Kern, Johannes; Trügler, Andreas; Niehues, Iris; Ewering, Johannes; Schmidt, Robert; Schneider, Robert; Najmaei, Sina; George, Antony; Zhang, Jing; Lou, Jun; Hohenester, Ulrich; de Vasconcellos, Steffen Michaelis; Bratschitsch, Rudolf
    Atomically thin transition metal dichalcogenides (TMDCs) are an emerging class of two-dimensional semiconductors. Recently, the first optoelectronic devices featuring photodetection as well as electroluminescence have been demonstrated using monolayer TMDCs as active material. However, the lightﾖmatter coupling for atomically thin TMDCs is limited by their small absorption length and low photoluminescence quantum yield. Here, we significantly increase the lightﾖmatter interaction in monolayer tungsten disulfide (WS2) by coupling the atomically thin semiconductor to a plasmonic nanoantenna. Due to the plasmon resonance of the nanoantenna, strongly enhanced optical near-fields are generated within the WS2ﾠmonolayer. We observe an increase in photoluminescence intensity by more than 1 order of magnitude, resulting from a combined absorption and emission enhancement of the exciton in the WS2monolayer. The polarization characteristics of the coupled system are governed by the nanoantenna. The robust nanoantennaﾖmonolayer hybrid paves the way for efficient photodetectors, solar cells, and light-emitting devices based on two-dimensional materials.