CVD-grown monolayered MoS2 as an effective photosensor operating at low-voltage

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dc.citation.firstpage011004en_US
dc.citation.journalTitle2D Materialsen_US
dc.citation.volumeNumber1en_US
dc.contributor.authorPerea-López, Néstoren_US
dc.contributor.authorLin, Zhongen_US
dc.contributor.authorPradhan, Nihar R.en_US
dc.contributor.authorIñiguez-Rábago, Agustínen_US
dc.contributor.authorElías, Ana Lauraen_US
dc.contributor.authorMcCreary, Amberen_US
dc.contributor.authorLou, Junen_US
dc.contributor.authorAjayan, Pulickel M.en_US
dc.contributor.authorTerrones, Humbertoen_US
dc.contributor.authorBalicas, Luisen_US
dc.contributor.authorTerrones, Mauricioen_US
dc.date.accessioned2016-02-02T19:17:43Zen_US
dc.date.available2016-02-02T19:17:43Zen_US
dc.date.issued2014en_US
dc.description.abstractWe report the fabrication of a photosensor based on as-grown single crystal monolayers of MoS2synthesized by chemical vapor deposition (CVD). The measurements were performed using Au/Ti leads in a two terminal configuration on CVD-grown MoS2 on a SiO2/Si substrate. The device was operated in air at room temperature at low bias voltages ranging from −2 V to 2 V and its sensing capabilities were tested for two different excitation wavelengths (514.5 nm and 488 nm). The responsivity reached 1.1 mA W−1 when excited with a 514.5 nm laser at a bias of 1.5 V. This responsivity is one order of magnitude larger than that reported from photo devices fabricated using CVD-grown multilayered WS2. A rectifying-effect was observed for the optically excited current, which was four times larger in the direct polarization bias when compared to the reverse bias photocurrent. Such rectifying behavior can be attributed to the asymmetric electrode placement on the triangular MoS2 monocrystal. It is envisioned that these components could eventually be used as efficient and low cost photosensors based on CVD-grown transition metal dichalcogenide monolayers.en_US
dc.identifier.citationPerea-López, Néstor, Lin, Zhong, Pradhan, Nihar R., et al.. "CVD-grown monolayered MoS2 as an effective photosensor operating at low-voltage." <i>2D Materials,</i> 1, (2014) IOP Publishing: 011004. http://dx.doi.org/10.1088/2053-1583/1/1/011004.en_US
dc.identifier.doihttp://dx.doi.org/10.1088/2053-1583/1/1/011004en_US
dc.identifier.urihttps://hdl.handle.net/1911/88301en_US
dc.language.isoengen_US
dc.publisherIOP Publishingen_US
dc.rightsContent from this work may be used under the terms of the Creative Commons Attribution 3.0 licence. Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI.en_US
dc.rights.urihttp://creativecommons.org/licenses/by/3.0/en_US
dc.titleCVD-grown monolayered MoS2 as an effective photosensor operating at low-voltageen_US
dc.typeJournal articleen_US
dc.type.dcmiTexten_US
dc.type.publicationpublisher versionen_US
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