Electrically tunable hot-silicon terahertz attenuator

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dc.citation.firstpage141110en_US
dc.citation.journalTitleApplied Physics Lettersen_US
dc.citation.volumeNumber105en_US
dc.contributor.authorWang, Minjieen_US
dc.contributor.authorVajtai, Roberten_US
dc.contributor.authorAjayan, Pulickel M.en_US
dc.contributor.authorKono, Junichiroen_US
dc.date.accessioned2015-01-08T14:55:03Zen_US
dc.date.available2015-01-08T14:55:03Zen_US
dc.date.issued2014en_US
dc.description.abstractWe have developed a continuously tunable, broadband terahertz attenuator with a transmission tuning range greater than 103. Attenuation tuning is achieved electrically, by simply changing the DC voltage applied to a heating wire attached to a bulk silicon wafer, which controls its temperature between room temperature and ~550 K, with the corresponding free-carrier density adjusted between ~1011 cm−3 and ~1017 cm−3. This “hot-silicon”-based terahertz attenuator works most effectively at 450–550 K (corresponding to a DC voltage variation of only ~7 V) and completely shields terahertz radiation above 550 K in a frequency range of 0.1–2.5 THz. Both intrinsic and doped silicon wafers were tested and demonstrated to work well as a continuously tunable attenuator. All behaviors can be understood quantitatively via the free-carrier Drude model taking into account thermally activated intrinsic carriers.en_US
dc.identifier.citationWang, Minjie, Vajtai, Robert, Ajayan, Pulickel M., et al.. "Electrically tunable hot-silicon terahertz attenuator." <i>Applied Physics Letters,</i> 105, (2014) AIP Publishing LLC: 141110. http://dx.doi.org/10.1063/1.4897531.en_US
dc.identifier.doihttp://dx.doi.org/10.1063/1.4897531en_US
dc.identifier.urihttps://hdl.handle.net/1911/78910en_US
dc.language.isoengen_US
dc.publisherAIP Publishing LLCen_US
dc.rightsThis is an author's peer-reviewed final manuscript, as accepted by the publisher. The published article is copyrighted by AIP Publishing LLCen_US
dc.subject.keywordterahertzen_US
dc.subject.keywordattenuationen_US
dc.subject.keywordshieldingen_US
dc.subject.keywordhot siliconen_US
dc.titleElectrically tunable hot-silicon terahertz attenuatoren_US
dc.typeJournal articleen_US
dc.type.dcmiTexten_US
dc.type.publicationpost-printen_US
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