Metallic 1T phase source/drain electrodes for field effect transistors from chemical vapor deposited MoS2

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dc.citation.firstpage92516en_US
dc.citation.journalTitleAPL Materialsen_US
dc.citation.volumeNumber2en_US
dc.contributor.authorKappera, Rajeshen_US
dc.contributor.authorVoiry, Damienen_US
dc.contributor.authorYalcin, Sibel Ebruen_US
dc.contributor.authorJen, Wesleyen_US
dc.contributor.authorAcerce, Muharremen_US
dc.contributor.authorTorrel, Solen_US
dc.contributor.authorBranch, Brittanyen_US
dc.contributor.authorLei, Sidongen_US
dc.contributor.authorChen, Weibingen_US
dc.contributor.authorNajmaei, Sinaen_US
dc.contributor.authorLou, Junen_US
dc.contributor.authorAjayan, Pulickel M.en_US
dc.contributor.authorGupta, Gautamen_US
dc.contributor.authorMohite, Aditya D.en_US
dc.contributor.authorChhowalla, Manishen_US
dc.date.accessioned2014-10-30T19:33:33Zen_US
dc.date.available2014-10-30T19:33:33Zen_US
dc.date.issued2014en_US
dc.description.abstractTwo dimensional transitionmetal dichalcogenides (2D TMDs) offer promise as optoelectronic materials due to their direct band gap and reasonably good mobility values. However, most metals form high resistance contacts on semiconducting TMDs such as MoS2. The large contact resistance limits the performance of devices. Unlike bulk materials, low contact resistance cannot be stably achieved in 2D materials by doping. Here we build on our previous work in which we demonstrated that it is possible to achieve low contact resistance electrodes by phase transformation. We show that similar to the previously demonstrated mechanically exfoliated samples, it is possible to decrease the contact resistance and enhance the FET performance by locally inducing and patterning the metallic 1T phase of MoS2 on chemically vapor deposited material. The device properties are substantially improved with 1T phase source/drain electrodes.en_US
dc.identifier.citationKappera, Rajesh, Voiry, Damien, Yalcin, Sibel Ebru, et al.. "Metallic 1T phase source/drain electrodes for field effect transistors from chemical vapor deposited MoS2." <i>APL Materials,</i> 2, (2014) AIP: 92516. http://dx.doi.org/10.1063/1.4896077.en_US
dc.identifier.doihttp://dx.doi.org/10.1063/1.4896077en_US
dc.identifier.urihttps://hdl.handle.net/1911/77675en_US
dc.language.isoengen_US
dc.publisherAIPen_US
dc.rightsAll article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.en_US
dc.rights.urihttps://creativecommons.org/licenses/by/3.0/en_US
dc.titleMetallic 1T phase source/drain electrodes for field effect transistors from chemical vapor deposited MoS2en_US
dc.typeJournal articleen_US
dc.type.dcmiTexten_US
dc.type.publicationpublisher versionen_US
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