Metallic 1T phase source/drain electrodes for field effect transistors from chemical vapor deposited MoS2

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dc.citation.firstpage92516
dc.citation.journalTitleAPL Materials
dc.citation.volumeNumber2
dc.contributor.authorKappera, Rajesh
dc.contributor.authorVoiry, Damien
dc.contributor.authorYalcin, Sibel Ebru
dc.contributor.authorJen, Wesley
dc.contributor.authorAcerce, Muharrem
dc.contributor.authorTorrel, Sol
dc.contributor.authorBranch, Brittany
dc.contributor.authorLei, Sidong
dc.contributor.authorChen, Weibing
dc.contributor.authorNajmaei, Sina
dc.contributor.authorLou, Jun
dc.contributor.authorAjayan, Pulickel M.
dc.contributor.authorGupta, Gautam
dc.contributor.authorMohite, Aditya D.
dc.contributor.authorChhowalla, Manish
dc.date.accessioned2014-10-30T19:33:33Z
dc.date.available2014-10-30T19:33:33Z
dc.date.issued2014
dc.description.abstractTwo dimensional transitionmetal dichalcogenides (2D TMDs) offer promise as optoelectronic materials due to their direct band gap and reasonably good mobility values. However, most metals form high resistance contacts on semiconducting TMDs such as MoS2. The large contact resistance limits the performance of devices. Unlike bulk materials, low contact resistance cannot be stably achieved in 2D materials by doping. Here we build on our previous work in which we demonstrated that it is possible to achieve low contact resistance electrodes by phase transformation. We show that similar to the previously demonstrated mechanically exfoliated samples, it is possible to decrease the contact resistance and enhance the FET performance by locally inducing and patterning the metallic 1T phase of MoS2 on chemically vapor deposited material. The device properties are substantially improved with 1T phase source/drain electrodes.
dc.identifier.citationKappera, Rajesh, Voiry, Damien, Yalcin, Sibel Ebru, et al.. "Metallic 1T phase source/drain electrodes for field effect transistors from chemical vapor deposited MoS2." <i>APL Materials,</i> 2, (2014) AIP: 92516. http://dx.doi.org/10.1063/1.4896077.
dc.identifier.doihttp://dx.doi.org/10.1063/1.4896077
dc.identifier.urihttps://hdl.handle.net/1911/77675
dc.language.isoeng
dc.publisherAIP
dc.rightsAll article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.
dc.rights.urihttps://creativecommons.org/licenses/by/3.0/
dc.titleMetallic 1T phase source/drain electrodes for field effect transistors from chemical vapor deposited MoS2
dc.typeJournal article
dc.type.dcmiText
dc.type.publicationpublisher version
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