A review of ultrawide bandgap materials: properties, synthesis and devices

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dc.citation.articleNumberitac004
dc.citation.issueNumber1
dc.citation.journalTitleOxford Open Materials Science
dc.citation.volumeNumber2
dc.contributor.authorXu, Mingfei
dc.contributor.authorWang, Dawei
dc.contributor.authorFu, Kai
dc.contributor.authorMudiyanselage, Dinusha Herath
dc.contributor.authorFu, Houqiang
dc.contributor.authorZhao, Yuji
dc.date.accessioned2022-12-13T19:11:21Z
dc.date.available2022-12-13T19:11:21Z
dc.date.issued2022
dc.description.abstractUltrawide bandgap (UWBG) materials such as diamond, Ga2O3, hexagonal boron nitride (h-BN) and AlN, are a new class of semiconductors that possess a wide range of attractive properties, including very large bandgap, high critical electric field, high carrier mobility and chemical inertness. Due to these outstanding characteristics, UWBG materials are promising candidates to enable high-performance devices for power electronics, ultraviolet photonics, quantum sensing and quantum computing applications. Despite their great potential, the research of UWBG semiconductors is still at a nascent stage and represents a challenging interdisciplinary research area of physics, materials science and devices engineering. In this review, the material properties, synthesis methods and device applications of UWBG semiconductors diamond, Ga2O3, h-BN and AlN will be presented and their recent progress, challenges and research opportunities will be discussed.
dc.identifier.citationXu, Mingfei, Wang, Dawei, Fu, Kai, et al.. "A review of ultrawide bandgap materials: properties, synthesis and devices." <i>Oxford Open Materials Science,</i> 2, no. 1 (2022) Oxford University Press: https://doi.org/10.1093/oxfmat/itac004.
dc.identifier.digitalitac004
dc.identifier.doihttps://doi.org/10.1093/oxfmat/itac004
dc.identifier.urihttps://hdl.handle.net/1911/114105
dc.language.isoeng
dc.publisherOxford University Press
dc.rightsThis is an Open Access article distributed under the terms of the Creative Commons Attribution License (https://creativecommons.org/licenses/by/4.0/), which permits unrestricted reuse, distribution, and reproduction in any medium, provided the original work is properly cited.
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/
dc.titleA review of ultrawide bandgap materials: properties, synthesis and devices
dc.typeJournal article
dc.type.dcmiText
dc.type.publicationpublisher version
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