A review of ultrawide bandgap materials: properties, synthesis and devices

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dc.citation.articleNumberitac004en_US
dc.citation.issueNumber1en_US
dc.citation.journalTitleOxford Open Materials Scienceen_US
dc.citation.volumeNumber2en_US
dc.contributor.authorXu, Mingfeien_US
dc.contributor.authorWang, Daweien_US
dc.contributor.authorFu, Kaien_US
dc.contributor.authorMudiyanselage, Dinusha Herathen_US
dc.contributor.authorFu, Houqiangen_US
dc.contributor.authorZhao, Yujien_US
dc.date.accessioned2022-12-13T19:11:21Zen_US
dc.date.available2022-12-13T19:11:21Zen_US
dc.date.issued2022en_US
dc.description.abstractUltrawide bandgap (UWBG) materials such as diamond, Ga2O3, hexagonal boron nitride (h-BN) and AlN, are a new class of semiconductors that possess a wide range of attractive properties, including very large bandgap, high critical electric field, high carrier mobility and chemical inertness. Due to these outstanding characteristics, UWBG materials are promising candidates to enable high-performance devices for power electronics, ultraviolet photonics, quantum sensing and quantum computing applications. Despite their great potential, the research of UWBG semiconductors is still at a nascent stage and represents a challenging interdisciplinary research area of physics, materials science and devices engineering. In this review, the material properties, synthesis methods and device applications of UWBG semiconductors diamond, Ga2O3, h-BN and AlN will be presented and their recent progress, challenges and research opportunities will be discussed.en_US
dc.identifier.citationXu, Mingfei, Wang, Dawei, Fu, Kai, et al.. "A review of ultrawide bandgap materials: properties, synthesis and devices." <i>Oxford Open Materials Science,</i> 2, no. 1 (2022) Oxford University Press: https://doi.org/10.1093/oxfmat/itac004.en_US
dc.identifier.digitalitac004en_US
dc.identifier.doihttps://doi.org/10.1093/oxfmat/itac004en_US
dc.identifier.urihttps://hdl.handle.net/1911/114105en_US
dc.language.isoengen_US
dc.publisherOxford University Pressen_US
dc.rightsThis is an Open Access article distributed under the terms of the Creative Commons Attribution License (https://creativecommons.org/licenses/by/4.0/), which permits unrestricted reuse, distribution, and reproduction in any medium, provided the original work is properly cited.en_US
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/en_US
dc.titleA review of ultrawide bandgap materials: properties, synthesis and devicesen_US
dc.typeJournal articleen_US
dc.type.dcmiTexten_US
dc.type.publicationpublisher versionen_US
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