Excitonic Resonant Emission–Absorption of Surface Plasmons in Transition Metal Dichalcogenides for Chip-Level Electronic–Photonic Integrated Circuits

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dc.citation.firstpage869en_US
dc.citation.issueNumber5en_US
dc.citation.journalTitleACS Photonicsen_US
dc.citation.lastpage874en_US
dc.citation.volumeNumber3en_US
dc.contributor.authorZhu, Zhuanen_US
dc.contributor.authorYuan, Jiangtanen_US
dc.contributor.authorZhou, Haiqingen_US
dc.contributor.authorHu, Jonathanen_US
dc.contributor.authorZhang, Jingen_US
dc.contributor.authorWei, Chenglien_US
dc.contributor.authorYu, Fangen_US
dc.contributor.authorChen, Shuoen_US
dc.contributor.authorLan, Yuchengen_US
dc.contributor.authorYang, Yaoen_US
dc.contributor.authorWang, Yananen_US
dc.contributor.authorNiu, Chaoen_US
dc.contributor.authorRen, Zhifengen_US
dc.contributor.authorLou, Junen_US
dc.contributor.authorWang, Zhimingen_US
dc.contributor.authorBao, Jimingen_US
dc.date.accessioned2016-06-22T16:28:31Z
dc.date.available2016-06-22T16:28:31Z
dc.date.issued2016en_US
dc.description.abstractThe monolithic integration of electronics and photonics has attracted enormous attention due to its potential applications. A major challenge to this integration is the identification of suitable materials that can emit and absorb light at the same wavelength. In this paper we utilize unique excitonic transitions in WS2 monolayers and show that WS2 exhibits a perfect overlap between its absorption and photoluminescence spectra. By coupling WS2 to Ag nanowires, we then show that WS2 monolayers are able to excite and absorb surface plasmons of Ag nanowires at the same wavelength of exciton photoluminescence. This resonant absorption by WS2 is distinguished from that of the ohmic propagation loss of silver nanowires, resulting in a short propagation length of surface plasmons. Our demonstration of resonant optical generation and detection of surface plasmons enables nanoscale optical communication and paves the way for on-chip electronic–photonic integrated circuits.en_US
dc.identifier.citationZhu, Zhuan, Yuan, Jiangtan, Zhou, Haiqing, et al.. "Excitonic Resonant Emission–Absorption of Surface Plasmons in Transition Metal Dichalcogenides for Chip-Level Electronic–Photonic Integrated Circuits." <i>ACS Photonics,</i> 3, no. 5 (2016) American Chemical Society: 869-874. http://dx.doi.org/10.1021/acsphotonics.6b00101.
dc.identifier.doihttp://dx.doi.org/10.1021/acsphotonics.6b00101en_US
dc.identifier.urihttps://hdl.handle.net/1911/90513
dc.language.isoengen_US
dc.publisherAmerican Chemical Society
dc.rightsThis is an open access article published under an ACS AuthorChoice License, which permits copying and redistribution of the article or any adaptations for non-commercial purposes.en_US
dc.rights.urihttp://pubs.acs.org/page/policy/authorchoice_termsofuse.htmlen_US
dc.subject.keyword2D transition metal dichalcogenidesen_US
dc.subject.keywordelectronic−photonic integrated circuitsen_US
dc.subject.keywordresonant exciton−plasmon interactionen_US
dc.subject.keywordchip-scale optical communicationen_US
dc.titleExcitonic Resonant Emission–Absorption of Surface Plasmons in Transition Metal Dichalcogenides for Chip-Level Electronic–Photonic Integrated Circuitsen_US
dc.typeJournal articleen_US
dc.type.dcmiTexten_US
dc.type.publicationpublisher versionen_US
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