Area-selective atomic layer deposition on 2D monolayer lateral superlattices

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dc.citation.articleNumber2138
dc.citation.journalTitleNature Communications
dc.citation.volumeNumber15
dc.contributor.authorPark, Jeongwon
dc.contributor.authorKwak, Seung Jae
dc.contributor.authorKang, Sumin
dc.contributor.authorOh, Saeyoung
dc.contributor.authorShin, Bongki
dc.contributor.authorNoh, Gichang
dc.contributor.authorKim, Tae Soo
dc.contributor.authorKim, Changhwan
dc.contributor.authorPark, Hyeonbin
dc.contributor.authorOh, Seung Hoon
dc.contributor.authorKang, Woojin
dc.contributor.authorHur, Namwook
dc.contributor.authorChai, Hyun-Jun
dc.contributor.authorKang, Minsoo
dc.contributor.authorKwon, Seongdae
dc.contributor.authorLee, Jaehyun
dc.contributor.authorLee, Yongjoon
dc.contributor.authorMoon, Eoram
dc.contributor.authorShi, Chuqiao
dc.contributor.authorLou, Jun
dc.contributor.authorLee, Won Bo
dc.contributor.authorKwak, Joon Young
dc.contributor.authorYang, Heejun
dc.contributor.authorChung, Taek-Mo
dc.contributor.authorEom, Taeyong
dc.contributor.authorSuh, Joonki
dc.contributor.authorHan, Yimo
dc.contributor.authorJeong, Hu Young
dc.contributor.authorKim, YongJoo
dc.contributor.authorKang, Kibum
dc.date.accessioned2024-07-25T20:56:28Z
dc.date.available2024-07-25T20:56:28Z
dc.date.issued2024
dc.description.abstractThe advanced patterning process is the basis of integration technology to realize the development of next-generation high-speed, low-power consumption devices. Recently, area-selective atomic layer deposition (AS-ALD), which allows the direct deposition of target materials on the desired area using a deposition barrier, has emerged as an alternative patterning process. However, the AS-ALD process remains challenging to use for the improvement of patterning resolution and selectivity. In this study, we report a superlattice-based AS-ALD (SAS-ALD) process using a two-dimensional (2D) MoS2-MoSe2 lateral superlattice as a pre-defining template. We achieved a minimum half pitch size of a sub-10 nm scale for the resulting AS-ALD on the 2D superlattice template by controlling the duration time of chemical vapor deposition (CVD) precursors. SAS-ALD introduces a mechanism that enables selectivity through the adsorption and diffusion processes of ALD precursors, distinctly different from conventional AS-ALD method. This technique facilitates selective deposition even on small pattern sizes and is compatible with the use of highly reactive precursors like trimethyl aluminum. Moreover, it allows for the selective deposition of a variety of materials, including Al2O3, HfO2, Ru, Te, and Sb2Se3.
dc.identifier.citationPark, J., Kwak, S. J., Kang, S., Oh, S., Shin, B., Noh, G., Kim, T. S., Kim, C., Park, H., Oh, S. H., Kang, W., Hur, N., Chai, H.-J., Kang, M., Kwon, S., Lee, J., Lee, Y., Moon, E., Shi, C., … Kang, K. (2024). Area-selective atomic layer deposition on 2D monolayer lateral superlattices. Nature Communications, 15(1), 2138. https://doi.org/10.1038/s41467-024-46293-w
dc.identifier.digitals41467-024-46293-w
dc.identifier.doihttps://doi.org/10.1038/s41467-024-46293-w
dc.identifier.urihttps://hdl.handle.net/1911/117543
dc.language.isoeng
dc.publisherSpringer Nature
dc.rightsExcept where otherwise noted, this work is licensed under a Creative Commons Attribution (CC BY) license.  Permission to reuse, publish, or reproduce the work beyond the terms of the license or beyond the bounds of fair use or other exemptions to copyright law must be obtained from the copyright holder.
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/
dc.titleArea-selective atomic layer deposition on 2D monolayer lateral superlattices
dc.typeJournal article
dc.type.dcmiText
dc.type.publicationpublisher version
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