Area-selective atomic layer deposition on 2D monolayer lateral superlattices

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dc.citation.articleNumber2138en_US
dc.citation.journalTitleNature Communicationsen_US
dc.citation.volumeNumber15en_US
dc.contributor.authorPark, Jeongwonen_US
dc.contributor.authorKwak, Seung Jaeen_US
dc.contributor.authorKang, Suminen_US
dc.contributor.authorOh, Saeyoungen_US
dc.contributor.authorShin, Bongkien_US
dc.contributor.authorNoh, Gichangen_US
dc.contributor.authorKim, Tae Sooen_US
dc.contributor.authorKim, Changhwanen_US
dc.contributor.authorPark, Hyeonbinen_US
dc.contributor.authorOh, Seung Hoonen_US
dc.contributor.authorKang, Woojinen_US
dc.contributor.authorHur, Namwooken_US
dc.contributor.authorChai, Hyun-Junen_US
dc.contributor.authorKang, Minsooen_US
dc.contributor.authorKwon, Seongdaeen_US
dc.contributor.authorLee, Jaehyunen_US
dc.contributor.authorLee, Yongjoonen_US
dc.contributor.authorMoon, Eoramen_US
dc.contributor.authorShi, Chuqiaoen_US
dc.contributor.authorLou, Junen_US
dc.contributor.authorLee, Won Boen_US
dc.contributor.authorKwak, Joon Youngen_US
dc.contributor.authorYang, Heejunen_US
dc.contributor.authorChung, Taek-Moen_US
dc.contributor.authorEom, Taeyongen_US
dc.contributor.authorSuh, Joonkien_US
dc.contributor.authorHan, Yimoen_US
dc.contributor.authorJeong, Hu Youngen_US
dc.contributor.authorKim, YongJooen_US
dc.contributor.authorKang, Kibumen_US
dc.date.accessioned2024-07-25T20:56:28Zen_US
dc.date.available2024-07-25T20:56:28Zen_US
dc.date.issued2024en_US
dc.description.abstractThe advanced patterning process is the basis of integration technology to realize the development of next-generation high-speed, low-power consumption devices. Recently, area-selective atomic layer deposition (AS-ALD), which allows the direct deposition of target materials on the desired area using a deposition barrier, has emerged as an alternative patterning process. However, the AS-ALD process remains challenging to use for the improvement of patterning resolution and selectivity. In this study, we report a superlattice-based AS-ALD (SAS-ALD) process using a two-dimensional (2D) MoS2-MoSe2 lateral superlattice as a pre-defining template. We achieved a minimum half pitch size of a sub-10 nm scale for the resulting AS-ALD on the 2D superlattice template by controlling the duration time of chemical vapor deposition (CVD) precursors. SAS-ALD introduces a mechanism that enables selectivity through the adsorption and diffusion processes of ALD precursors, distinctly different from conventional AS-ALD method. This technique facilitates selective deposition even on small pattern sizes and is compatible with the use of highly reactive precursors like trimethyl aluminum. Moreover, it allows for the selective deposition of a variety of materials, including Al2O3, HfO2, Ru, Te, and Sb2Se3.en_US
dc.identifier.citationPark, J., Kwak, S. J., Kang, S., Oh, S., Shin, B., Noh, G., Kim, T. S., Kim, C., Park, H., Oh, S. H., Kang, W., Hur, N., Chai, H.-J., Kang, M., Kwon, S., Lee, J., Lee, Y., Moon, E., Shi, C., … Kang, K. (2024). Area-selective atomic layer deposition on 2D monolayer lateral superlattices. Nature Communications, 15(1), 2138. https://doi.org/10.1038/s41467-024-46293-wen_US
dc.identifier.digitals41467-024-46293-wen_US
dc.identifier.doihttps://doi.org/10.1038/s41467-024-46293-wen_US
dc.identifier.urihttps://hdl.handle.net/1911/117543en_US
dc.language.isoengen_US
dc.publisherSpringer Natureen_US
dc.rightsExcept where otherwise noted, this work is licensed under a Creative Commons Attribution (CC BY) license.  Permission to reuse, publish, or reproduce the work beyond the terms of the license or beyond the bounds of fair use or other exemptions to copyright law must be obtained from the copyright holder.en_US
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/en_US
dc.titleArea-selective atomic layer deposition on 2D monolayer lateral superlatticesen_US
dc.typeJournal articleen_US
dc.type.dcmiTexten_US
dc.type.publicationpublisher versionen_US
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